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Sung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946

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Reference TypeJournal (article/letter/editorial)
TitleCycling of defects between trapped negative charge and interface states at the Si‐SiO2interface
JournalApplied Physics Letters
AuthorsSung, J. M.Author
Lyon, S. A.Author
Year1987 (April 27)Volume50
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.97946Search in ResearchGate
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Mindat Ref. ID8479912Long-form Identifiermindat:1:5:8479912:6
GUID0
Full ReferenceSung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
Plain TextSung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
In(1987, April) Applied Physics Letters Vol. 50 (17) AIP Publishing

See Also

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Chang, S. T., Lyon, S. A. (1986) Location of positive charge trapped near the Si‐SiO2interface at low temperature. Applied Physics Letters, 48 (2). 136-138 doi:10.1063/1.96975
Chang, S. T., Wu, J. K., Lyon, S. A. (1986) Amphoteric defects at the Si‐SiO2interface. Applied Physics Letters, 48 (10). 662-664 doi:10.1063/1.96736
Kenkare, P. U., Lyon, S. A. (1989) Relationship between trapped holes, positive ions, and interface states in irradiated Si‐SiO2structures. Applied Physics Letters, 55 (22). 2328-2330 doi:10.1063/1.102358
Shiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Si‐SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446
Wang, S. J., Sung, J. M., Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal‐oxide‐silicon structures. Applied Physics Letters, 52 (17). 1431-1433 doi:10.1063/1.99690
Tseng, Wesley L. (1987) A new charge pumping method of measuring Si‐SiO2interface states. Journal of Applied Physics, 62 (2). 591-599 doi:10.1063/1.339786
Singh, J., Madhukar, A. (1981) The origin and nature of silicon band‐gap states at the Si/SiO2interface. Applied Physics Letters, 38 (11). 884-886 doi:10.1063/1.92208
Ludeke, R., Cartier, E. (2001) Imaging of trapped charge in SiO2 and at the SiO2–Si interface. Applied Physics Letters, 78 (25). 3998-4000 doi:10.1063/1.1380396
Mir, Abdellah, Vuillaume, Dominique (1993) Positive charge and interface state creation at the Si‐SiO2interface during low‐fluence and high‐field electron injections. Applied Physics Letters, 62 (10). 1125-1127 doi:10.1063/1.108763
Johnson, N. M., Biegelsen, D. K., Moyer, M. D., Chang, S. T., Poindexter, E. H., Caplan, P. J. (1983) Characteristic electronic defects at the Si‐SiO2interface. Applied Physics Letters, 43 (6). 563-565 doi:10.1063/1.94420
Brower, K. L., Myers, S. M. (1990) Chemical kinetics of hydrogen and (111) Si‐SiO2interface defects. Applied Physics Letters, 57 (2). 162-164 doi:10.1063/1.103971
 
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