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Shiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Si‐SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446

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Reference TypeJournal (article/letter/editorial)
TitleCharge character of interface traps at the Si‐SiO2interface
JournalApplied Physics Letters
AuthorsShiono, NoboruAuthor
Shimaya, MasakazuAuthor
Nakajima, OsaakeAuthor
Year1986 (April 28)Volume48
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.96446Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477345Long-form Identifiermindat:1:5:8477345:6
GUID0
Full ReferenceShiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Si‐SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446
Plain TextShiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Si‐SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446
In(1986, April) Applied Physics Letters Vol. 48 (17) AIP Publishing

See Also

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Ogawa, Shigeo, Shimaya, Masakazu, Shiono, Noboru (1995) Interface‐trap generation at ultrathin SiO2(4–6 nm)‐Si interfaces during negative‐bias temperature aging. Journal of Applied Physics, 77 (3). 1137-1148 doi:10.1063/1.358977
Ogawa, Shigeo, Shiono, Noboru (1992) Interface‐trap generation induced by hot‐hole injection at the Si‐SiO2interface. Applied Physics Letters, 61 (7). 807-809 doi:10.1063/1.107751
Ogawa, Shigeo, Shiono, Noboru, Shimaya, Masakazu (1990) Neutral electron trap generation in SiO2by hot holes. Applied Physics Letters, 56 (14). 1329-1331 doi:10.1063/1.103200
Itsumi, Manabu, Nakajima, Osaake, Shiono, Noboru (1992) Oxide defects originating from Czochralski silicon substrates. Journal of Applied Physics, 72 (6). 2185-2191 doi:10.1063/1.351609
Ushizaka, Hironori, Shimaya, Masakazu, Shiono, Noboru (1986) Recovery Characteristics of Radiation Damage in MOS Devices. Japanese Journal of Applied Physics, 25. 930-931 doi:10.1143/jjap.25.930
Chang, S. T., Lyon, S. A. (1986) Location of positive charge trapped near the Si‐SiO2interface at low temperature. Applied Physics Letters, 48 (2). 136-138 doi:10.1063/1.96975
Sung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
Shimaya, Masakazu, Shiono, Noboru (1985) Electron Trapping Induced by High-Energy Ionizing Radiation in SiO2. Japanese Journal of Applied Physics, 24. 1193-1197 doi:10.1143/jjap.24.1193
Itsumi, Manabu, Shiono, Noboru, Shimaya, Masakazu (1993) Influence of polysilicon gate formation conditions on thin gate oxide (4–6 nm) dielectric and charging properties. Journal of Applied Physics, 73 (11). 7515-7519 doi:10.1063/1.353999
Nakajima, Osaake, Shiono, Noboru, Muramoto, Susumu, Hashimoto, Chisato (1979) Defects in a Gate Oxide Grown after the LOCOS Process. Japanese Journal of Applied Physics, 18 (5) 943-951 doi:10.1143/jjap.18.943
Shiono, Noboru, Shimaya, Masakazu, Sano, Koichi (1983) Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides. Japanese Journal of Applied Physics, 22. 1430-1435 doi:10.1143/jjap.22.1430
 
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