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Ogawa, Shigeo, Shiono, Noboru, Shimaya, Masakazu (1990) Neutral electron trap generation in SiO2by hot holes. Applied Physics Letters, 56 (14). 1329-1331 doi:10.1063/1.103200

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Reference TypeJournal (article/letter/editorial)
TitleNeutral electron trap generation in SiO2by hot holes
JournalApplied Physics Letters
AuthorsOgawa, ShigeoAuthor
Shiono, NoboruAuthor
Shimaya, MasakazuAuthor
Year1990 (April 2)Volume56
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.103200Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489905Long-form Identifiermindat:1:5:8489905:5
GUID0
Full ReferenceOgawa, Shigeo, Shiono, Noboru, Shimaya, Masakazu (1990) Neutral electron trap generation in SiO2by hot holes. Applied Physics Letters, 56 (14). 1329-1331 doi:10.1063/1.103200
Plain TextOgawa, Shigeo, Shiono, Noboru, Shimaya, Masakazu (1990) Neutral electron trap generation in SiO2by hot holes. Applied Physics Letters, 56 (14). 1329-1331 doi:10.1063/1.103200
In(1990, April) Applied Physics Letters Vol. 56 (14) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Ogawa, Shigeo, Shimaya, Masakazu, Shiono, Noboru (1995) Interfaceā€trap generation at ultrathin SiO2(4ā€“6 nm)ā€Si interfaces during negativeā€bias temperature aging. Journal of Applied Physics, 77 (3). 1137-1148 doi:10.1063/1.358977
Ogawa, Shigeo, Shiono, Noboru (1992) Interfaceā€trap generation induced by hotā€hole injection at the Siā€SiO2interface. Applied Physics Letters, 61 (7). 807-809 doi:10.1063/1.107751
Shiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Siā€SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446
Ogawa, Shigeo, Shimaya, Masakazu, Shiono, Noboru (1996) Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4ā€“6 nm) Gate Oxides. Japanese Journal of Applied Physics, 35. 1484-1490 doi:10.1143/jjap.35.1484
Shimaya, Masakazu, Shiono, Noboru (1985) Electron Trapping Induced by High-Energy Ionizing Radiation in SiO2. Japanese Journal of Applied Physics, 24. 1193-1197 doi:10.1143/jjap.24.1193
Ushizaka, Hironori, Shimaya, Masakazu, Shiono, Noboru (1986) Recovery Characteristics of Radiation Damage in MOS Devices. Japanese Journal of Applied Physics, 25. 930-931 doi:10.1143/jjap.25.930
Shiono, Noboru, Shimaya, Masakazu, Sano, Koichi (1983) Ionizing Radiation Effects in MOS Capacitors with Very Thin Gate Oxides. Japanese Journal of Applied Physics, 22. 1430-1435 doi:10.1143/jjap.22.1430
Itsumi, Manabu, Shiono, Noboru, Shimaya, Masakazu (1993) Influence of polysilicon gate formation conditions on thin gate oxide (4ā€“6 nm) dielectric and charging properties. Journal of Applied Physics, 73 (11). 7515-7519 doi:10.1063/1.353999
Shiono, Noboru (1982) Interface Trapped Charge Generation and Electron Trapping Kinetics in MOSFET's due to Substrate Hot-Electron Injection into Gate SiO[sub 2]. Journal of the Electrochemical Society, 129. 1760pp. doi:10.1149/1.2124288
Nomura, Koji, Ogawa, Hisahito (1992) Electron trap studies in Alā€Taā€O/CdSe thinā€film transistors using a hot electron injection method. Journal of Applied Physics, 71 (2). 786-790 doi:10.1063/1.351344
Yasui, Kanji, Katoh, Hirohisa, Komaki, Kazuki, Kaneda, Shigeo (1990) Amorphous SiN films grown by hotā€filament chemical vapor deposition using monomethylamine. Applied Physics Letters, 56 (10). 898-900 doi:10.1063/1.102622
 
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