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Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126

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Reference TypeJournal (article/letter/editorial)
TitleTrapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices
JournalApplied Physics Letters
AuthorsFleetwood, D. M.Author
Reber, R. A.Author
Winokur, P. S.Author
Year1992 (April 20)Volume60
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.107126Search in ResearchGate
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Mindat Ref. ID8498317Long-form Identifiermindat:1:5:8498317:8
GUID0
Full ReferenceFleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
Plain TextFleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
In(1992, April) Applied Physics Letters Vol. 60 (16) AIP Publishing

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Fleetwood, D. M., Winokur, P. S., Riewe, L. C., Reber, R. A. (1998) Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors. Journal of Applied Physics, 84 (11). 6141-6148 doi:10.1063/1.368881
Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C. (1993) Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices. Journal of Applied Physics, 73 (10). 5058-5074 doi:10.1063/1.353777
Fleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116
Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
Fleetwood, D. M. (2022) Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices. Applied Physics Letters, 121 (7) 70503 doi:10.1063/5.0105173
Fleetwood, D. M., Winokur, P. S., Flament, O., Leray, J. L. (1999) Stability of trapped electrons in SiO2. Applied Physics Letters, 74 (20). 2969-2971 doi:10.1063/1.123982
McWhorter, P. J., Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 48 (2). 133-135 doi:10.1063/1.96974
Fleetwood, D. M. (1990) Radiation‐induced charge neutralization and interface‐trap buildup in metal‐oxide‐semiconductor devices. Journal of Applied Physics, 67 (1). 580-583 doi:10.1063/1.345199
Warren, W. L., Fleetwood, D. M., Shaneyfelt, M. R., Schwank, J. R., Winokur, P. S., Devine, R. A. B., Mathiot, D. (1994) Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2systems. Applied Physics Letters, 64 (25). 3452-3454 doi:10.1063/1.111943
Buchanan, D. A. (1992) Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors. Applied Physics Letters, 60 (2). 216-218 doi:10.1063/1.106968
 
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