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Fleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116

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Reference TypeJournal (article/letter/editorial)
TitleEffect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation
JournalApplied Physics Letters
AuthorsFleetwood, D. M.Author
Winokur, P. S.Author
Dozier, C. M.Author
Brown, D. B.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99116Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482938Long-form Identifiermindat:1:5:8482938:4
GUID0
Full ReferenceFleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116
Plain TextFleetwood, D. M., Winokur, P. S., Dozier, C. M., Brown, D. B. (1988) Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation. Applied Physics Letters, 52 (18). 1514-1516 doi:10.1063/1.99116
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Dozier, C. M., Fleetwood, D. M., Brown, D. B., Winokur, P. S. (1987) An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors. IEEE Transactions on Nuclear Science, 34 (6) 1535-1539 doi:10.1109/tns.1987.4337511
Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C. (1993) Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices. Journal of Applied Physics, 73 (10). 5058-5074 doi:10.1063/1.353777
Schwank, J. R., Fleetwood, D. M. (1988) Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 53 (9). 770-772 doi:10.1063/1.99828
Fleetwood, D. M., Winokur, P. S., Riewe, L. C., Reber, R. A. (1998) Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors. Journal of Applied Physics, 84 (11). 6141-6148 doi:10.1063/1.368881
Fleetwood, D. M. (2022) Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices. Applied Physics Letters, 121 (7) 70503 doi:10.1063/5.0105173
Xiong, H. D., Fleetwood, D. M., Felix, J. A., Gusev, E. P., D’Emic, C. (2003) Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks. Applied Physics Letters, 83 (25). 5232-5234 doi:10.1063/1.1635071
Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
Dozier, C. M., Brown, D. B. (1981) Effect of Photon Energy on the Response of MOS Devices. IEEE Transactions on Nuclear Science, 28 (6) 4137-4141 doi:10.1109/tns.1981.4335689
Zhou, X. J., Fleetwood, D. M., Danciu, I., Dasgupta, A., Francis, S. A., Touboul, A. D. (2007) Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 91 (17). 173501pp. doi:10.1063/1.2800380
Fleetwood, D. M., Winokur, P. S., Lorence, L. J., Beezhold, W., Dressendorfer, P. V., Schwank, J. R. (1986) The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation. IEEE Transactions on Nuclear Science, 33 (6) 1245-1251 doi:10.1109/tns.1986.4334586
 
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