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McWhorter, P. J., Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 48 (2). 133-135 doi:10.1063/1.96974

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Reference TypeJournal (article/letter/editorial)
TitleSimple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors
JournalApplied Physics Letters
AuthorsMcWhorter, P. J.Author
Winokur, P. S.Author
Year1986 (January 13)Volume48
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.96974Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477536Long-form Identifiermindat:1:5:8477536:6
GUID0
Full ReferenceMcWhorter, P. J., Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 48 (2). 133-135 doi:10.1063/1.96974
Plain TextMcWhorter, P. J., Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 48 (2). 133-135 doi:10.1063/1.96974
In(1986, January) Applied Physics Letters Vol. 48 (2) AIP Publishing

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Fleetwood, D. M., Winokur, P. S., Reber, R. A., Meisenheimer, T. L., Schwank, J. R., Shaneyfelt, M. R., Riewe, L. C. (1993) Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices. Journal of Applied Physics, 73 (10). 5058-5074 doi:10.1063/1.353777
Vitanov, P., Eisele, I. (1983) A new transient capacitance technique for the determination of interface traps in metal‐oxide‐semiconductor transistors. Journal of Applied Physics, 54 (9). 5227-5230 doi:10.1063/1.332749
Fleetwood, D. M., Winokur, P. S., Riewe, L. C., Reber, R. A. (1998) Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors. Journal of Applied Physics, 84 (11). 6141-6148 doi:10.1063/1.368881
Everist, S. C., Miller, S. L., McWhorter, P. J. (1992) Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (17). 2101-2103 doi:10.1063/1.107102
Fleetwood, D. M. (1989) Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices. Applied Physics Letters, 55 (5). 466-468 doi:10.1063/1.101854
Wang, W., Deng, J., Hwang, J. C. M., Xuan, Y., Wu, Y., Ye, P. D. (2010) Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (7). 72102pp. doi:10.1063/1.3315870
Fleetwood, D. M., Reber, R. A., Winokur, P. S. (1992) Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices. Applied Physics Letters, 60 (16). 2008-2010 doi:10.1063/1.107126
Ohshima, Takeshi, Yoshikawa, Masahito, Itoh, Hisayoshi, Aoki, Yasushi, Nashiyama, Isamu (1998) Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1002
Fleetwood, D. M. (2023) Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors. Applied Physics Letters, 122 (17) doi:10.1063/5.0146549
Anders, M. A., Lenahan, P. M., Lelis, A. J. (2016) Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?. Applied Physics Letters, 109 (14). 142106pp. doi:10.1063/1.4963708
Hofmann, F., Krautschneider, W. H. (1989) A simple technique for determining the interface‐trap distribution of submicron metal‐oxide‐semiconductor transistors by the charge pumping method. Journal of Applied Physics, 65 (3). 1358-1360 doi:10.1063/1.343034
 
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