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Everist, S. C., Miller, S. L., McWhorter, P. J. (1992) Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (17). 2101-2103 doi:10.1063/1.107102

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Reference TypeJournal (article/letter/editorial)
TitleModeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors
JournalApplied Physics Letters
AuthorsEverist, S. C.Author
Miller, S. L.Author
McWhorter, P. J.Author
Year1992 (April 27)Volume60
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.107102Search in ResearchGate
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Mindat Ref. ID8498429Long-form Identifiermindat:1:5:8498429:2
GUID0
Full ReferenceEverist, S. C., Miller, S. L., McWhorter, P. J. (1992) Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (17). 2101-2103 doi:10.1063/1.107102
Plain TextEverist, S. C., Miller, S. L., McWhorter, P. J. (1992) Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (17). 2101-2103 doi:10.1063/1.107102
In(1992, April) Applied Physics Letters Vol. 60 (17) AIP Publishing

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Miller, S. L., McWhorter, P. J., Dellin, T. A., Zimmerman, G. T. (1990) Effect of temperature on data retention of silicon‐oxide‐nitride‐oxide‐semiconductor nonvolatile memory transistors. Journal of Applied Physics, 67 (11). 7115-7124 doi:10.1063/1.345062
McWhorter, P. J., Miller, S. L., Dellin, T. A. (1990) Modeling the memory retention characteristics of silicon‐nitride‐oxide‐silicon nonvolatile transistors in a varying thermal environment. Journal of Applied Physics, 68 (4). 1902-1909 doi:10.1063/1.346580
Miller, S. L., McWhorter, P. J. (1991) A predictive model of electron and hole decay in silicon‐nitride‐oxide‐silicon nonvolatile memory transistors experiencing arbitrary thermal environments. Journal of Applied Physics, 70 (8). 4569-4576 doi:10.1063/1.350341
McWhorter, P. J., Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 48 (2). 133-135 doi:10.1063/1.96974
Liu, Patrick S., Li, G. P. (1992) Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (15). 1845-1847 doi:10.1063/1.107183
Choi, J. Y., Ko, P. K., Hu, C. (1987) Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors. Applied Physics Letters, 50 (17). 1188-1190 doi:10.1063/1.97906
Habermehl, S., Nasby, R. D., Rightley, M. J. (1999) Cycling endurance of silicon–oxide–nitride–oxide–silicon nonvolatile memory stacks prepared with nitrided SiO2/Si(100) interfaces. Applied Physics Letters, 75 (8). 1122-1124 doi:10.1063/1.124616
Warren, W. L., Kanicki, J., Rong, F. C., Poindexter, E. H., McWhorter, P. J. (1992) Charge trapping centers in N‐rich silicon nitride thin films. Applied Physics Letters, 61 (2). 216-218 doi:10.1063/1.108222
Miller, S. L., McWhorter, P. J. (1992) Physics of the ferroelectric nonvolatile memory field effect transistor. Journal of Applied Physics, 72 (12). 5999-6010 doi:10.1063/1.351910
Seo, Y. J., Kim, K. C., Kim, T. G., Sung, Y. M., Cho, H. Y., Joo, M. S., Pyi, S. H. (2008) Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory. Applied Physics Letters, 92 (13). 132104pp. doi:10.1063/1.2830000
Adivarahan, V., Rai, S., Tipirneni, N., Koudymov, A., Yang, J., Simin, G., Asif Khan, M. (2006) Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors. Applied Physics Letters, 88 (18). 182507pp. doi:10.1063/1.2198508
 
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