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Liu, Patrick S., Li, G. P. (1992) Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (15). 1845-1847 doi:10.1063/1.107183

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Reference TypeJournal (article/letter/editorial)
TitleMultistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors
JournalApplied Physics Letters
AuthorsLiu, Patrick S.Author
Li, G. P.Author
Year1992 (April 13)Volume60
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.107183Search in ResearchGate
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Mindat Ref. ID8498265Long-form Identifiermindat:1:5:8498265:6
GUID0
Full ReferenceLiu, Patrick S., Li, G. P. (1992) Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (15). 1845-1847 doi:10.1063/1.107183
Plain TextLiu, Patrick S., Li, G. P. (1992) Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (15). 1845-1847 doi:10.1063/1.107183
In(1992, April) Applied Physics Letters Vol. 60 (15) AIP Publishing

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Liu, Patrick S., Li, G. P. (1991) Body current scanning: A novel technique for characterizing the floating body effects and parasitic bipolar action in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Applied Physics Letters, 59 (12). 1435-1437 doi:10.1063/1.105279
Ouisse, T., Ghibaudo, G., Brini, J., Cristoloveanu, S., Borel, G. (1991) Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors. Journal of Applied Physics, 70 (7). 3912-3919 doi:10.1063/1.349200
Liu, Patrick S., Liu, George T. (1993) An investigation of anomalous current‐voltage characteristics in silicon‐on‐insulator metal‐oxide‐semiconductor transistors. Journal of Applied Physics, 74 (2). 1410-1416 doi:10.1063/1.354899
Li, Yukun, Zhang, Rui (2019) Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 114 (13). 132101pp. doi:10.1063/1.5086890
Sato, Yasuhiro, Tsuchiya, Toshiaki (2000) Suppression of Floating Body Effects by Controlling Potential Profile in the Lower Body Region of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics, 39. 3271-3276 doi:10.1143/jjap.39.3271
Everist, S. C., Miller, S. L., McWhorter, P. J. (1992) Modeling the cycling degradation of silicon‐oxide‐nitride‐oxide‐semiconductor transistors. Applied Physics Letters, 60 (17). 2101-2103 doi:10.1063/1.107102
Chen, M. C., Ku, S. H., Chan, C. T., Wang, Tahui (2004) Soft breakdown enhanced hysteresis effects in ultrathin oxide silicon-on-insulator metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 96 (4). 2297-2300 doi:10.1063/1.1773384
Uchida, Ken, Takagi, Shin-ichi (2003) Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 82 (17). 2916-2918 doi:10.1063/1.1571227
Tsuchiya, Toshiaki, Yoshida, Toshiyuki, Sato, Yasuhiro (2002) Impact of Hot Carrier Stress on Low-Frequency Noise Characteristics in Floating-Body Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 41. 4427-4431 doi:10.1143/jjap.41.4427
Gautier, J. (1993) On the internal current gain of buried N‐body silicon‐on‐insulator N‐metal‐oxide‐semiconductor field‐effect‐transistors. Journal of Applied Physics, 73 (11). 7972-7974 doi:10.1063/1.353907
Uchida, Ken, Koga, Junji, Takagi, Shin-ichi (2007) Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 102 (7). 74510pp. doi:10.1063/1.2785957
 
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