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Fujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T. (1986) Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 701-703 doi:10.1063/1.96748

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Reference TypeJournal (article/letter/editorial)
TitleEffects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsFujiwara, K.Author
Nishikawa, Y.Author
Tokuda, Y.Author
Nakayama, T.Author
Year1986 (March 17)Volume48
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.96748Search in ResearchGate
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Mindat Ref. ID8477079Long-form Identifiermindat:1:5:8477079:6
GUID0
Full ReferenceFujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T. (1986) Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 701-703 doi:10.1063/1.96748
Plain TextFujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T. (1986) Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 701-703 doi:10.1063/1.96748
In(1986, March) Applied Physics Letters Vol. 48 (11) AIP Publishing

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Fujiwara, K., Kanamoto, K., Ohta, Y.N., Tokuda, Y., Nakayama, T. (1987) Classification and origins of GaAs oval defects grown by molecular beam epitaxy. Journal of Crystal Growth, 80 (1). 104-112 doi:10.1016/0022-0248(87)90529-x
Nishikawa, Yasumi, Kanamoto, Kyozo, Tokuda, Yasunori, Fujiwara, Kenzo, Nakayama, Takashi (1986) On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 25. 908-909 doi:10.1143/jjap.25.908
Matteson, S., Shih, H. D. (1986) Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy. Applied Physics Letters, 48 (1). 47-49 doi:10.1063/1.96757
Weng, Shang‐Lin, Webb, C., Chai, Y. G., Bandy, S. G. (1985) Particulates: An origin of GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 47 (4). 391-393 doi:10.1063/1.96177
Chai, Young G., Chow, Robert (1981) Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy. Applied Physics Letters, 38 (10). 796-798 doi:10.1063/1.92167
Shinohara, Masanori, Ito, Tomonori (1989) Thermodynamic study on the origin of oval defects in GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 65 (11). 4260-4267 doi:10.1063/1.343310
Kasai, Jun-ichi, Kawata, Masahiko (1998) Microphotoluminescence of oval defects in a GaAs layer grown by molecular beam epitaxy. Applied Physics Letters, 73 (14). 2012-2014 doi:10.1063/1.122352
Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1990) Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy. Applied Surface Science, 41. 526-529 doi:10.1016/0169-4332(89)90115-3
Chai, Young G., Pao, Y‐C., Hierl, T. (1985) Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 47 (12). 1327-1329 doi:10.1063/1.96269
Fujiwara, K., Nakamura, A., Tokuda, Y., Nakayama, T., Hirai, M. (1986) Improved recombination lifetime of photoexcited carriers in GaAs single quantum well heterostructures confined by GaAs/AlAs short‐period superlattices. Applied Physics Letters, 49 (18). 1193-1195 doi:10.1063/1.97411
Weng, Shang‐Lin (1986) Ga2O3: The origin of growth‐induced oval defects in GaAs molecular beam epitaxy. Applied Physics Letters, 49 (6). 345-347 doi:10.1063/1.97163
 
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