0169-4332(89)90115-3

Library Home Bookshelves View by Type Using Search

Books Catalogs/Sales Lists Journals Reports Thesis/Dissertation

Search for Books Search for Journals Manage Subjects Statistics Books without DDC/LCC Top Unstructured Orphaned Articles

Bookshelves (DDC layout)Bookshelves (LCC layout)Latest Books

Advanced

Search inside 'Applied Surface ...' only

- Only viewable:

Reference Type	Journal (article/letter/editorial)
Title	Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy
Journal	Applied Surface Science
Authors	Kanamoto, K.		Author
	Fujiwara, K.		Author
	Tokuda, Y.		Author
	Tsukada, N.		Author
	Ishii, M.		Author
	Nakayama, T.		Author
Year	1990 (January)	Volume	41
Publisher	Elsevier BV
DOI	doi:10.1016/0169-4332(89)90115-3Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9894985	Long-form Identifier	mindat:1:5:9894985:2
GUID	0
Full Reference	Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1990) Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy. Applied Surface Science, 41. 526-529 doi:10.1016/0169-4332(89)90115-3
Plain Text	Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1990) Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy. Applied Surface Science, 41. 526-529 doi:10.1016/0169-4332(89)90115-3
In	(n.d.) Applied Surface Science Vol. 41. Elsevier BV

	Kanamoto, K., Fujiwara, K., Tokuda, Y., Tsukada, N., Ishii, M., Nakayama, T. (1989) Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfaces. Journal of Crystal Growth, 95 (1). 273-276 doi:10.1016/0022-0248(89)90400-4
	Fujiwara, K., Kanamoto, K., Tsukada, N., Miyatake, H., Koyama, H. (1989) Photoluminescence line shape of excitons in GaAs single‐quantum wells with and without heterointerface ordering. Journal of Applied Physics, 66 (3). 1488-1491 doi:10.1063/1.344406
	Fujiwara, K., Kanamoto, K., Ohta, Y.N., Tokuda, Y., Nakayama, T. (1987) Classification and origins of GaAs oval defects grown by molecular beam epitaxy. Journal of Crystal Growth, 80 (1). 104-112 doi:10.1016/0022-0248(87)90529-x
	Fujiwara, K., Tsukada, N., Nakayama, T. (1988) Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells. Applied Physics Letters, 53 (8). 675-677 doi:10.1063/1.99847
	Brandt, O., Kanamoto, K., Tsugami, M., Isu, T., Tsukada, N. (1995) Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates. Applied Physics Letters, 67 (13). 1885-1887 doi:10.1063/1.114365
	Fujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T. (1986) Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 701-703 doi:10.1063/1.96748
	Yano, M., Ashida, M., Iwai, Y., Inoue, M. (1990) Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy. Applied Surface Science, 41. 457-463 doi:10.1016/0169-4332(89)90103-7
	Sobiesierski, Z., Clark, S.A., Williams, R.H. (1992) Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science, 56. 703-707 doi:10.1016/0169-4332(92)90325-r
	Yamanaka, K., Naritsuka, S., Kanamoto, K., Mihara, M., Ishii, M. (1987) Electron traps in AlGaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 61 (11). 5062-5069 doi:10.1063/1.338330
	Okumura, H., Miki, K., Sakamoto, K., Sakamoto, T., Endo, K., Yoshida, S. (1990) Raman scattering and photoluminescence characterization of Ge/Si strained-layer superlattices grown by phase-locked epitaxy. Applied Surface Science, 41. 548-552 doi:10.1016/0169-4332(89)90120-7
	Sato, Michio, Horikoshi, Yoshiji (1990) Photoluminescence from GaAs/AlGaAs quantum wells with InAs monomolecular planes grown by flow-rate modulation epitaxy. Surface Science, 228 (1). 192-196 doi:10.1016/0039-6028(90)90289-k

Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 10, 2025 21:00:41

Go to top of page

See Also