Vote for your favorite mineral in #MinCup25! - Pollucite vs. Tugtupite
It's the cesium #pollucite against the optical changeling #tugtupite for this match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Chou, T. C., Wong, C. Y., Tu, K. N. (1986) Enhanced grain growth of phosphorus‐doped polycrystalline silicon by titanium silicide formation. Applied Physics Letters, 49 (20). 1381-1383 doi:10.1063/1.97331

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEnhanced grain growth of phosphorus‐doped polycrystalline silicon by titanium silicide formation
JournalApplied Physics Letters
AuthorsChou, T. C.Author
Wong, C. Y.Author
Tu, K. N.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97331Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8478829Long-form Identifiermindat:1:5:8478829:0
GUID0
Full ReferenceChou, T. C., Wong, C. Y., Tu, K. N. (1986) Enhanced grain growth of phosphorus‐doped polycrystalline silicon by titanium silicide formation. Applied Physics Letters, 49 (20). 1381-1383 doi:10.1063/1.97331
Plain TextChou, T. C., Wong, C. Y., Tu, K. N. (1986) Enhanced grain growth of phosphorus‐doped polycrystalline silicon by titanium silicide formation. Applied Physics Letters, 49 (20). 1381-1383 doi:10.1063/1.97331
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Chou, T. C., Wong, C. Y., Tu, K. N. (1987) Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution. Journal of Applied Physics, 62 (7). 2722-2726 doi:10.1063/1.339423
Chou, T. C., Tu, K. N. (1988) Interaction of a polycrystalline silicon/SiO2/silicon substrate under thermal/electrical fields. Applied Physics Letters, 52 (16). 1317-1319 doi:10.1063/1.99684
Chou, T. C., Wong, C. Y., Tu, K. N. (1987) Lattice imaging of metastable TiSi2. Journal of Applied Physics, 62 (6). 2275-2279 doi:10.1063/1.339483
Chou, T. C., Tu, K. N. (1988) Secondary grain growth and formation of antiphase domains in ordered Cu3Au thin films. Journal of Applied Physics, 64 (5). 2375-2379 doi:10.1063/1.341669
Yeh, Y. T., Chou, C. K., Hsu, Y. C., Chen, Chih, Tu, K. N. (2005) Threshold current density of electromigration in eutectic SnPb solder. Applied Physics Letters, 86 (20). 203504pp. doi:10.1063/1.1929870
Wong, C. Y., Lai, F. S., McFarland, P. A., d’Heurle, F. M., Ting, C. Y. (1986) Cross‐sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus‐doped polycrystalline silicon gate. Journal of Applied Physics, 59 (8). 2773-2776 doi:10.1063/1.336986
Wong, C. Y., Wang, L. K., McFarland, P. A., Ting, C. Y. (1986) Thermal stability of TiSi2on mono‐ and polycrystalline silicon. Journal of Applied Physics, 60 (1). 243-246 doi:10.1063/1.337688
Hayasaka, N., Okano, H., Sekine, M., Horiike, Y. (1986) Photo‐assisted anisotropic etching of phosphorus‐doped polycrystalline silicon employing reactive species generated by a microwave discharge. Applied Physics Letters, 48 (17). 1165-1166 doi:10.1063/1.96458
Jain, G. C., Das, B. K., Bhattacherjee, S. P. (1978) Grain growth in polycrystalline silicon. Applied Physics Letters, 33 (5). 445-446 doi:10.1063/1.90372
Seager, C. H., Castner, T. G. (1978) Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon. Journal of Applied Physics, 49 (7). 3879-3889 doi:10.1063/1.325394
Zhao, Y., Tu, C. W., Bae, I.-T., Seong, T.-Y. (1999) Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy. Applied Physics Letters, 74 (21). 3182-3184 doi:10.1063/1.124100
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 8, 2025 03:21:06
Go to top of page