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Hong, Won‐Pyo, Bhattacharya, Pallab K., Singh, Jasprit (1987) Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 618-620 doi:10.1063/1.98099

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Reference TypeJournal (article/letter/editorial)
TitleNonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsHong, Won‐PyoAuthor
Bhattacharya, Pallab K.Author
Singh, JaspritAuthor
Year1987 (March 9)Volume50
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.98099Search in ResearchGate
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Mindat Ref. ID8479511Long-form Identifiermindat:1:5:8479511:1
GUID0
Full ReferenceHong, Won‐Pyo, Bhattacharya, Pallab K., Singh, Jasprit (1987) Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 618-620 doi:10.1063/1.98099
Plain TextHong, Won‐Pyo, Bhattacharya, Pallab K., Singh, Jasprit (1987) Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 618-620 doi:10.1063/1.98099
In(1987, March) Applied Physics Letters Vol. 50 (10) AIP Publishing

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Pamulapati, Jagadeesh, Bhattacharya, Pallab K. (1990) Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy. Applied Physics Letters, 56 (2). 103-104 doi:10.1063/1.103045
Chang, Kevin H., Berger, Paul R., Singh, Jasprit, Bhattacharya, Pallab K. (1987) Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs. Applied Physics Letters, 51 (4). 261-263 doi:10.1063/1.98467
Temkin, H., Gershoni, D., Panish, M. B. (1987) InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy. Applied Physics Letters, 50 (25). 1776-1778 doi:10.1063/1.97743
Chou, S. T., Cheng, K. Y. (1993) High quality In0.52Al0.48As grown by modulated arsenic molecular beam epitaxy. Applied Physics Letters, 63 (20). 2815-2817 doi:10.1063/1.110296
Zhang, Meng, Bhattacharya, Pallab, Guo, Wei, Banerjee, Animesh (2010) Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. Applied Physics Letters, 96 (13). 132103pp. doi:10.1063/1.3374882
Reynolds, D. C., Bajaj, K. K., Litton, C. W., Yu, P. W., Klem, J., Peng, C. K., Morkoç, H., Singh, Jasprit (1986) Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 727-729 doi:10.1063/1.96703
Frei, Michel, Tsui, D. C., Tsang, W. T. (1987) Electronic properties of In0.53Ga0.47As‐InP single quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 50 (10). 606-608 doi:10.1063/1.98095
Chin, Albert, Bhattacharya, Pallab K., Kothiyal, G. P. (1987) Growth of GaAs on SiOxby molecular‐beam epitaxy. Journal of Applied Physics, 62 (4). 1416-1419 doi:10.1063/1.339855
Chu, X., Sivananthan, S., Faurie, J. P. (1987) Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 597-599 doi:10.1063/1.98092
Tsang, W. T. (1987) GaInAsP/InP double heterostructure lasers emitting at 1.5 μm grown by chemical beam epitaxy. Applied Physics Letters, 50 (2). 63-65 doi:10.1063/1.97873
Agarwala, S., Won, T., Morkoç, H. (1989) AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1151-1153 doi:10.1063/1.100745
 
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