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Chang, Kevin H., Berger, Paul R., Singh, Jasprit, Bhattacharya, Pallab K. (1987) Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs. Applied Physics Letters, 51 (4). 261-263 doi:10.1063/1.98467

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs
JournalApplied Physics Letters
AuthorsChang, Kevin H.Author
Berger, Paul R.Author
Singh, JaspritAuthor
Bhattacharya, Pallab K.Author
Year1987 (July 27)Volume51
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.98467Search in ResearchGate
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Mindat Ref. ID8482024Long-form Identifiermindat:1:5:8482024:0
GUID0
Full ReferenceChang, Kevin H., Berger, Paul R., Singh, Jasprit, Bhattacharya, Pallab K. (1987) Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs. Applied Physics Letters, 51 (4). 261-263 doi:10.1063/1.98467
Plain TextChang, Kevin H., Berger, Paul R., Singh, Jasprit, Bhattacharya, Pallab K. (1987) Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs. Applied Physics Letters, 51 (4). 261-263 doi:10.1063/1.98467
In(1987, July) Applied Physics Letters Vol. 51 (4) AIP Publishing

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Berger, Paul R., Chang, Kevin, Bhattacharya, Pallab, Singh, Jasprit, Bajaj, K. K. (1988) Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime. Applied Physics Letters, 53 (8). 684-686 doi:10.1063/1.99850
Juang, F.‐Y., Nashimoto, Yasunobu, Bhattacharya, Pallab K. (1985) Molecular beam epitaxial growth and photoluminescence of near‐ideal GaAs‐AlxGa1−xAs single quantum wells. Journal of Applied Physics, 58 (5). 1986-1989 doi:10.1063/1.336007
Fukunaga, Toshiaki, Hashimoto, Akihiro, Watanabe, Nozomu (1989) Molecular Beam Epitaxial Growth of InxGa1-xAs and InxAl1-xAs on Si Substrates. Japanese Journal of Applied Physics, 28. 1276-1277 doi:10.1143/jjap.28.1276
Pickrell, G. W., Xu, C. F., Chang, K. L., Hsieh, K. C., Cheng, K. Y. (2003) Compliant epitaxial growth of InxGa1−xAs and InxAl1−xAs on In0.25Ga0.75As pseudosubstrates. Journal of Applied Physics, 93 (9). 5429-5434 doi:10.1063/1.1565692
Berger, Paul R., Bhattacharya, Pallab K., Singh, Jasprit (1987) Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction. Journal of Applied Physics, 61 (8). 2856-2860 doi:10.1063/1.337880
Chika, Shigeaki, Kato, Hiromu, Nakayama, Masaaki, Sano, Naokatsu (1986) Temperature Dependence of Molecular Beam Epitaxial Growth Rates for InxGa1-xAs and InxAl1-xAs. Japanese Journal of Applied Physics, 25. 1441-1442 doi:10.1143/jjap.25.1441
Juang, F‐Y., Singh, Jasprit, Bhattacharya, Pallab K., Bajema, K., Merlin, R. (1986) Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators. Applied Physics Letters, 48 (19). 1246-1248 doi:10.1063/1.96993
Jaffe, Mark, Sekiguchi, Yoshihiko, Singh, Jasprit (1987) Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors. Applied Physics Letters, 51 (23). 1943-1945 doi:10.1063/1.98308
Das, Utpal, Bhattacharya, Pallab K. (1985) Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 58 (1). 341-344 doi:10.1063/1.335682
Chyi, Jen‐Inn, Shieh, Jia‐Lin, Lin, Ray‐Ming, Nee, Tzer‐En, Pan, Jen‐Wei (1994) Molecular‐beam epitaxial growth of InxAl1−xAs on GaAs. Applied Physics Letters, 65 (6). 699-701 doi:10.1063/1.112273
Hong, Won‐Pyo, Bhattacharya, Pallab K., Singh, Jasprit (1987) Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy. Applied Physics Letters, 50 (10). 618-620 doi:10.1063/1.98099
 
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