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Berger, Paul R., Chang, Kevin, Bhattacharya, Pallab, Singh, Jasprit, Bajaj, K. K. (1988) Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime. Applied Physics Letters, 53 (8). 684-686 doi:10.1063/1.99850

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Reference TypeJournal (article/letter/editorial)
TitleRole of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
JournalApplied Physics Letters
AuthorsBerger, Paul R.Author
Chang, KevinAuthor
Bhattacharya, PallabAuthor
Singh, JaspritAuthor
Bajaj, K. K.Author
Year1988 (August 22)Volume53
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99850Search in ResearchGate
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Mindat Ref. ID8485723Long-form Identifiermindat:1:5:8485723:5
GUID0
Full ReferenceBerger, Paul R., Chang, Kevin, Bhattacharya, Pallab, Singh, Jasprit, Bajaj, K. K. (1988) Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime. Applied Physics Letters, 53 (8). 684-686 doi:10.1063/1.99850
Plain TextBerger, Paul R., Chang, Kevin, Bhattacharya, Pallab, Singh, Jasprit, Bajaj, K. K. (1988) Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime. Applied Physics Letters, 53 (8). 684-686 doi:10.1063/1.99850
In(1988, August) Applied Physics Letters Vol. 53 (8) AIP Publishing

See Also

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Chang, Kevin H., Berger, Paul R., Singh, Jasprit, Bhattacharya, Pallab K. (1987) Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs. Applied Physics Letters, 51 (4). 261-263 doi:10.1063/1.98467
Berger, Paul R., Bhattacharya, Pallab K., Singh, Jasprit (1987) Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction. Journal of Applied Physics, 61 (8). 2856-2860 doi:10.1063/1.337880
Lentzen, M., Gerthsen, D., Förster, A., Urban, K. (1992) Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001). Applied Physics Letters, 60 (1). 74-76 doi:10.1063/1.107379
Pamulapati, J., Berger, P., Chang, K., Oh, J., Chen, Yi, Singh, J., Bhattacharya, P., Gibala, R. (1989) Growth phenomena and characteristics of strained InxGa1−xAs on GaAs. Journal of Crystal Growth, 95 (1). 193-196 doi:10.1016/0022-0248(89)90380-1
Chen, Y. C., Bhattacharya, P. K., Singh, J. (1990) Reflection high‐energy electron diffraction studies of the growth of strained InxGa1−xAs on GaAs substrate by migration‐enhanced epitaxy. Applied Physics Letters, 57 (7). 692-694 doi:10.1063/1.103594
Das, Utpal, Chen, Yi, Bhattacharya, Pallab K., Berger, Paul R. (1988) Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides. Applied Physics Letters, 53 (22). 2129-2131 doi:10.1063/1.100295
Jaffe, Mark, Sekiguchi, Yoshihiko, Singh, Jasprit (1987) Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors. Applied Physics Letters, 51 (23). 1943-1945 doi:10.1063/1.98308
Singh, Jasprit, Bajaj, K. K. (1985) Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study. Applied Physics Letters, 46 (6). 577-579 doi:10.1063/1.95545
Juang, F‐Y., Singh, Jasprit, Bhattacharya, Pallab K., Bajema, K., Merlin, R. (1986) Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators. Applied Physics Letters, 48 (19). 1246-1248 doi:10.1063/1.96993
Das, Utpal, Bhattacharya, Pallab K. (1985) Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 58 (1). 341-344 doi:10.1063/1.335682
People, R. (1987) Band alignments for pseudomorphic InP/InxGa1−xAs heterostructures for growth on (001)InP. Journal of Applied Physics, 62 (6). 2551-2553 doi:10.1063/1.339470
 
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