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Chen, C. L., Mahoney, L. J., Woodhouse, J. D., Finn, M. C., Nitishin, P. M. (1987) Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing. Applied Physics Letters, 50 (17). 1179-1181 doi:10.1063/1.97903

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Reference TypeJournal (article/letter/editorial)
TitleOhmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing
JournalApplied Physics Letters
AuthorsChen, C. L.Author
Mahoney, L. J.Author
Woodhouse, J. D.Author
Finn, M. C.Author
Nitishin, P. M.Author
Year1987 (April 27)Volume50
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.97903Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8479872Long-form Identifiermindat:1:5:8479872:9
GUID0
Full ReferenceChen, C. L., Mahoney, L. J., Woodhouse, J. D., Finn, M. C., Nitishin, P. M. (1987) Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing. Applied Physics Letters, 50 (17). 1179-1181 doi:10.1063/1.97903
Plain TextChen, C. L., Mahoney, L. J., Woodhouse, J. D., Finn, M. C., Nitishin, P. M. (1987) Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing. Applied Physics Letters, 50 (17). 1179-1181 doi:10.1063/1.97903
In(1987, April) Applied Physics Letters Vol. 50 (17) AIP Publishing

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Chen, C. L., Mahoney, L. J., Finn, M. C., Brooks, R. C., Chu, A., Mavroides, J. G. (1986) Low resistance Pd/Ge/Au and Ge/Pd/Au ohmic contacts ton‐type GaAs. Applied Physics Letters, 48 (8). 535-537 doi:10.1063/1.96498
Lai, Jiun‐Tsuen, Lee, Joseph Ya‐Min (1994) Pd/Ge ohmic contacts ton‐type GaAs formed by rapid thermal annealing. Applied Physics Letters, 64 (2). 229-231 doi:10.1063/1.111512
Aboelfotoh, M. O., Lin, C. L., Woodall, J. M. (1994) Novel low‐resistance ohmic contact ton‐type GaAs using Cu3Ge. Applied Physics Letters, 65 (25). 3245-3247 doi:10.1063/1.112426
Woodhouse, J. D., Gaidis, M. C., Donnelly, J. P., Armiento, C. A. (1987) Capless rapid thermal annealing of Si+‐implanted InP. Applied Physics Letters, 51 (3). 186-188 doi:10.1063/1.98917
Lester, L. F., Brown, J. M., Ramer, J. C., Zhang, L., Hersee, S. D., Zolper, J. C. (1996) Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal. Applied Physics Letters, 69 (18). 2737-2739 doi:10.1063/1.117695
Allen, L. H., Hung, L. S., Kavanagh, K. L., Phillips, J. R., Yu, A. J., Mayer, J. W. (1987) Ohmic contacts ton‐GaAs using In/Pd metallization. Applied Physics Letters, 51 (5). 326-327 doi:10.1063/1.98429
Katz, A., Weir, B. E., Maher, D. M., Thomas, P. M., Soler, M., Dautremont‐Smith, W. C., Karlicek, R. F., Wynn, J. D., Kimerling, L. C. (1989) Highly stable W/p‐In0.53Ga0.47As ohmic contacts formed by rapid thermal processing. Applied Physics Letters, 55 (21). 2220-2222 doi:10.1063/1.102066
Janega, P. L., McCaffrey, J., Landheer, D. (1989) Extremely low resistivity erbium ohmic contacts ton‐type silicon. Applied Physics Letters, 55 (14). 1415-1417 doi:10.1063/1.101611
Zheng, L. R., Wilson, S. A., Lawrence, D. J., Rudolph, S. I., Chen, S., Braunstein, G. (1992) Shallow ohmic contacts ton‐type GaAs and AlxGa1−xAs. Applied Physics Letters, 60 (7). 877-879 doi:10.1063/1.106491
Murakami, Masanori, Price, W. H., Greiner, J. H., Feder, J. D., Parks, C. C. (1989) Thermally stable ohmic contacts ton‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts. Journal of Applied Physics, 65 (9). 3546-3551 doi:10.1063/1.342629
Cole, M. W., Joshi, P. C., Hubbard, C., Demaree, J. D., Ervin, M. (2002) Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts ton-SiC for high temperature and pulsed power device applications. Journal of Applied Physics, 91 (6). 3864-3868 doi:10.1063/1.1450024
 
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