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Janega, P. L., McCaffrey, J., Landheer, D. (1989) Extremely low resistivity erbium ohmic contacts ton‐type silicon. Applied Physics Letters, 55 (14). 1415-1417 doi:10.1063/1.101611

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Reference TypeJournal (article/letter/editorial)
TitleExtremely low resistivity erbium ohmic contacts ton‐type silicon
JournalApplied Physics Letters
AuthorsJanega, P. L.Author
McCaffrey, J.Author
Landheer, D.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101611Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8488049Long-form Identifiermindat:1:5:8488049:1
GUID0
Full ReferenceJanega, P. L., McCaffrey, J., Landheer, D. (1989) Extremely low resistivity erbium ohmic contacts ton‐type silicon. Applied Physics Letters, 55 (14). 1415-1417 doi:10.1063/1.101611
Plain TextJanega, P. L., McCaffrey, J., Landheer, D. (1989) Extremely low resistivity erbium ohmic contacts ton‐type silicon. Applied Physics Letters, 55 (14). 1415-1417 doi:10.1063/1.101611
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Janega, P. L., McCaffrey, J., Landheer, D., Buchanan, M., Denhoff, M., Mitchel, D. (1988) Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures. Applied Physics Letters, 53 (21). 2056-2058 doi:10.1063/1.100496
Mandalapu, L. J., Yang, Z., Liu, J. L. (2007) Low-resistivity Au∕Ni Ohmic contacts to Sb-doped p-type ZnO. Applied Physics Letters, 90 (25). 252103pp. doi:10.1063/1.2750400
Mandalapu, L. J., Yang, Z., Liu, J. L. (2007) Erratum: “Low-resistivity Au/Ni Ohmic contacts to Sb-doped p-type ZnO” [Appl. Phys. Lett. 90, 252103 (2007)]. Applied Physics Letters, 91 (14). 149903pp. doi:10.1063/1.2795077
Nelson, S. F., Jackson, T. N. (1996) Ohmic contacts ton‐type silicon‐germanium. Applied Physics Letters, 69 (23). 3563-3565 doi:10.1063/1.117246
McKinnon, G. H., McMullin, J. N., Landheer, D., Buchanan, M., Janega, P., Denhoff, M. W. (1989) Selective contacts for silicon-doping superlattices. Canadian Journal of Physics, 67. 326-329 doi:10.1139/p89-057
Jang, T., Porter, L. M., Rutsch, G. W. M., Odekirk, B. (1999) Tantalum carbide ohmic contacts ton-type silicon carbide. Applied Physics Letters, 75 (25). 3956-3958 doi:10.1063/1.125506
Gallacher, K., Velha, P., Paul, D. J., MacLaren, I., Myronov, M., Leadley, D. R. (2012) Ohmic contacts to n-type germanium with low specific contact resistivity. Applied Physics Letters, 100 (2). 22113pp. doi:10.1063/1.3676667
Murakami, Masanori, Price, W. H. (1987) Thermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs. Applied Physics Letters, 51 (9). 664-666 doi:10.1063/1.98327
Murakami, Masanori, Price, W. H., Greiner, J. H., Feder, J. D., Parks, C. C. (1989) Thermally stable ohmic contacts ton‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts. Journal of Applied Physics, 65 (9). 3546-3551 doi:10.1063/1.342629
Chen, C. L., Mahoney, L. J., Woodhouse, J. D., Finn, M. C., Nitishin, P. M. (1987) Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing. Applied Physics Letters, 50 (17). 1179-1181 doi:10.1063/1.97903
Cho, S. M., Lee, J. D., Lee, H. H. (1991) Specific resistivity of ohmic contacts ton‐type direct band‐gap III‐V compound semiconductors. Journal of Applied Physics, 70 (1). 282-287 doi:10.1063/1.350297
 
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