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Tischler, M. A., Anderson, N. G., Kolbas, R. M., Bedair, S. M. (1987) Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy. Applied Physics Letters, 50 (18). 1266-1268 doi:10.1063/1.97879

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Reference TypeJournal (article/letter/editorial)
TitleStimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy
JournalApplied Physics Letters
AuthorsTischler, M. A.Author
Anderson, N. G.Author
Kolbas, R. M.Author
Bedair, S. M.Author
Year1987 (May 4)Volume50
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.97879Search in ResearchGate
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Mindat Ref. ID8479938Long-form Identifiermindat:1:5:8479938:4
GUID0
Full ReferenceTischler, M. A., Anderson, N. G., Kolbas, R. M., Bedair, S. M. (1987) Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy. Applied Physics Letters, 50 (18). 1266-1268 doi:10.1063/1.97879
Plain TextTischler, M. A., Anderson, N. G., Kolbas, R. M., Bedair, S. M. (1987) Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy. Applied Physics Letters, 50 (18). 1266-1268 doi:10.1063/1.97879
In(1987, May) Applied Physics Letters Vol. 50 (18) AIP Publishing

See Also

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Tischler, M. A., Anderson, N. G., Bedair, S. M. (1986) Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy. Applied Physics Letters, 49 (18). 1199-1200 doi:10.1063/1.97413
Lo, Y. C., Hsieh, K. Y., Kolbas, R. M. (1988) Stimulated emission in ultrathin (20 Å) AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 52 (22). 1853-1855 doi:10.1063/1.99619
Tischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804
Lee, J. H., Hsieh, K. Y., Hwang, Y. L., Kolbas, R. M. (1990) Stimulated emission from monolayer‐thick AlxGa1−xAs‐GaAs single quantum well heterostructures. Applied Physics Letters, 56 (7). 626-628 doi:10.1063/1.102718
McDermott, B. T., El‐Masry, N. A., Tischler, M. A., Bedair, S. M. (1987) Atomic layer epitaxy of the Ga‐As‐In‐As superalloy. Applied Physics Letters, 51 (22). 1830-1832 doi:10.1063/1.98484
Tischler, M. A., Bedair, S. M. (1986) Improved uniformity of epitaxial indium‐based compounds by atomic layer epitaxy. Applied Physics Letters, 49 (5). 274-276 doi:10.1063/1.97139
Katsuyama, T., Tischler, M. A., Karam, N. H., El‐Masry, N., Bedair, S. M. (1987) Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices. Applied Physics Letters, 51 (7). 529-531 doi:10.1063/1.98388
Bedair, S. M., Tischler, M. A., Katsuyama, T., El‐Masry, N. A. (1985) Atomic layer epitaxy of III‐V binary compounds. Applied Physics Letters, 47 (1). 51-53 doi:10.1063/1.96401
Lee, G. S., Hsieh, K. Y., Kolbas, R. M. (1986) Room‐temperature negative differential resistance in strained‐layer GaAs‐AlGaAs‐InGaAs quantum well heterostructures. Applied Physics Letters, 49 (22). 1528-1530 doi:10.1063/1.97271
Anderson, N. G., Lo, Y. C., Kolbas, R. M. (1986) High‐efficiency carrier collection and stimulated emission in thin (50 Å) pseudomorphic InxGa1−xAs quantum wells. Applied Physics Letters, 49 (13). 758-760 doi:10.1063/1.97538
Anderson, N. G., Laidig, W. D., Kolbas, R. M., Lo, Y. C. (1986) Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures. Journal of Applied Physics, 60 (7). 2361-2367 doi:10.1063/1.337146
 
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