Vote for your favorite mineral in #MinCup25! - Chrysotile vs. Pectolite
Two new minerals to launch this year's cup! Hazardous (but useful!) chrysotile faces off against stunning gem pectolite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Tischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSelf‐limiting mechanism in the atomic layer epitaxy of GaAs
JournalApplied Physics Letters
AuthorsTischler, M. A.Author
Bedair, S. M.Author
Year1986 (June 16)Volume48
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.96804Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477777Long-form Identifiermindat:1:5:8477777:1
GUID0
Full ReferenceTischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804
Plain TextTischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804
In(1986, June) Applied Physics Letters Vol. 48 (24) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Tischler, M. A., Anderson, N. G., Bedair, S. M. (1986) Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy. Applied Physics Letters, 49 (18). 1199-1200 doi:10.1063/1.97413
Tischler, M. A., Bedair, S. M. (1986) Improved uniformity of epitaxial indium‐based compounds by atomic layer epitaxy. Applied Physics Letters, 49 (5). 274-276 doi:10.1063/1.97139
Tischler, M. A., Anderson, N. G., Kolbas, R. M., Bedair, S. M. (1987) Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy. Applied Physics Letters, 50 (18). 1266-1268 doi:10.1063/1.97879
Bedair, S. M., Tischler, M. A., Katsuyama, T., El‐Masry, N. A. (1985) Atomic layer epitaxy of III‐V binary compounds. Applied Physics Letters, 47 (1). 51-53 doi:10.1063/1.96401
McDermott, B. T., El‐Masry, N. A., Tischler, M. A., Bedair, S. M. (1987) Atomic layer epitaxy of the Ga‐As‐In‐As superalloy. Applied Physics Letters, 51 (22). 1830-1832 doi:10.1063/1.98484
Bedair, S. M., Whisnant, J. K., Karam, N. H., Tischler, M. A., Katsuyama, T. (1986) Laser selective deposition of GaAs on Si. Applied Physics Letters, 48 (2). 174-176 doi:10.1063/1.96934
Sakuma, Y., Kodama, K., Ozeki, M. (1990) Atomic layer epitaxy of GaP and elucidation for self‐limiting mechanism. Applied Physics Letters, 56 (9). 827-829 doi:10.1063/1.102675
Reid, K. G., Urdianyk, H. M., Bedair, S. M. (1991) Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs. Applied Physics Letters, 59 (19). 2397-2399 doi:10.1063/1.106027
Bedair, S. M., Tischler, M. A., Katsuyama, T. (1986) New laterally selective growth technique by metalorganic chemical vapor deposition. Applied Physics Letters, 48 (1). 30-32 doi:10.1063/1.96751
Dip, Anthony, Eldallal, Gamal M., Colter, Peter C., Hayafuji, N., Bedair, S. M. (1993) Atomic layer epitaxy of GaAs with a 2 μm/h growth rate. Applied Physics Letters, 62 (19). 2378-2380 doi:10.1063/1.109370
Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 1, 2025 03:31:40
Go to top of page