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Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186

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Reference TypeJournal (article/letter/editorial)
TitleDirect writing of GaAs monolayers by laser‐assisted atomic layer epitaxy
JournalApplied Physics Letters
AuthorsKaram, N. H.Author
Liu, H.Author
Yoshida, I.Author
Bedair, S. M.Author
Year1988 (April 4)Volume52
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.99186Search in ResearchGate
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Mindat Ref. ID8482671Long-form Identifiermindat:1:5:8482671:2
GUID0
Full ReferenceKaram, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186
Plain TextKaram, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186
In(1988, April) Applied Physics Letters Vol. 52 (14) AIP Publishing

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Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Low‐temperature (250 °C) selective epitaxy of GaAs films andp‐njunction by laser‐assisted metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 767-769 doi:10.1063/1.99827
Karam, N. H., El‐Masry, N. A., Bedair, S. M. (1986) Laser direct writing of single‐crystal III‐V compounds on GaAs. Applied Physics Letters, 49 (14). 880-882 doi:10.1063/1.97523
Boutros, K. S., Roberts, J. C., Bedair, S. M. (1996) Direct writing of GaAs optical waveguides by laser‐assisted chemical vapor deposition. Applied Physics Letters, 68 (15). 2041-2042 doi:10.1063/1.116296
Karam, N.H., Liu, H., Yoshida, I., Jiang, B.-L., Bedair, S.M. (1988) Low temperature selective epitaxy of III–V compounds by laser assisted chemical vapor deposition. Journal of Crystal Growth, 93 (1). 254-258 doi:10.1016/0022-0248(88)90536-2
Hirose, S., Yoshida, A., Yamaura, M., Munekata, H. (1999) Surface smoothing of GaAs microstructure by atomic layer epitaxy. Applied Physics Letters, 74 (7). 964-966 doi:10.1063/1.123424
Bedair, S. M., Whisnant, J. K., Karam, N. H., Tischler, M. A., Katsuyama, T. (1986) Laser selective deposition of GaAs on Si. Applied Physics Letters, 48 (2). 174-176 doi:10.1063/1.96934
Mori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306
Dip, Anthony, Eldallal, Gamal M., Colter, Peter C., Hayafuji, N., Bedair, S. M. (1993) Atomic layer epitaxy of GaAs with a 2 μm/h growth rate. Applied Physics Letters, 62 (19). 2378-2380 doi:10.1063/1.109370
Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El‐Masry, N., Bedair, Salah M. (1995) Growth of device quality GaN at 550 °C by atomic layer epitaxy. Applied Physics Letters, 67 (1). 94-96 doi:10.1063/1.115519
Tischler, M. A., Anderson, N. G., Bedair, S. M. (1986) Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy. Applied Physics Letters, 49 (18). 1199-1200 doi:10.1063/1.97413
Tischler, M. A., Bedair, S. M. (1986) Self‐limiting mechanism in the atomic layer epitaxy of GaAs. Applied Physics Letters, 48 (24). 1681-1683 doi:10.1063/1.96804
 
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