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Mori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306

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Reference TypeJournal (article/letter/editorial)
TitleGaAs growth by atomic layer epitaxy using diethylgalliumchloride
JournalApplied Physics Letters
AuthorsMori, KazuoAuthor
Yoshida, MasajiAuthor
Usui, AkiraAuthor
Terao, HiroshiAuthor
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99306Search in ResearchGate
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Mindat Ref. ID8482362Long-form Identifiermindat:1:5:8482362:7
GUID0
Full ReferenceMori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306
Plain TextMori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Sasaoka, Chiaki, Yoshida, Masaji, Usui, Akira (1988) Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l490
Mori, Kazuo, Sugou, Shigeo, Kato, Yoshitake, Usui, Akira (1992) Growth of InAs and (InAs)1(GaAs)5superlattice by atomic layer epitaxy using dimethylindium chloride. Applied Physics Letters, 60 (14). 1717-1719 doi:10.1063/1.107480
Usui, Akira, Sunakawa, Haruo, StĂźtzler, Frank J., Ishida, Koichi (1990) InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy. Applied Physics Letters, 56 (3). 289-291 doi:10.1063/1.102811
Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Direct writing of GaAs monolayers by laser‐assisted atomic layer epitaxy. Applied Physics Letters, 52 (14). 1144-1146 doi:10.1063/1.99186
Usui, Akira, Sunakawa, Haruo (1986) GaAs Atomic Layer Epitaxy by Hydride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l212
Guo, Qixin, Ogawa, Hiroshi, Yamano, Hirofumi, Yoshida, Akira (1995) Growth of InN films on GaAs (111) and GaP(111) substrates by microwave‐excited metalorganic vapor phase epitaxy. Applied Physics Letters, 66 (6). 715-717 doi:10.1063/1.114109
Hirose, S., Yoshida, A., Yamaura, M., Munekata, H. (1999) Surface smoothing of GaAs microstructure by atomic layer epitaxy. Applied Physics Letters, 74 (7). 964-966 doi:10.1063/1.123424
Sato, Michio, Horikoshi, Yoshiji (1988) Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy. Applied Physics Letters, 52 (2). 123-125 doi:10.1063/1.99070
Yoshida, Kazuo, Takahashi, Katsuo, Okuno, Kazuhiko, Katagiri, Gen, Iwaki, Masaya, Ishitani, Akira (1988) Wear reduction of glassy carbon by Li implantation. Applied Physics Letters, 52 (13). 1046-1047 doi:10.1063/1.99205
Yamaguchi, Ko‐ichi, Okamoto, Kotaro (1991) Fabrication of GaAs fine stripe structures by selective metalorganic chemical vapor deposition using diethylgalliumchloride. Applied Physics Letters, 59 (27). 3580-3582 doi:10.1063/1.105638
Yamaguchi, Hiroshi, Homma, Yoshikazu (1998) Imaging of layer by layer growth processes during molecular beam epitaxy of GaAs on (111)A substrates by scanning electron microscopy. Applied Physics Letters, 73 (21). 3079-3081 doi:10.1063/1.122678
 
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