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Mori, Kazuo, Sugou, Shigeo, Kato, Yoshitake, Usui, Akira (1992) Growth of InAs and (InAs)1(GaAs)5superlattice by atomic layer epitaxy using dimethylindium chloride. Applied Physics Letters, 60 (14). 1717-1719 doi:10.1063/1.107480

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InAs and (InAs)1(GaAs)5superlattice by atomic layer epitaxy using dimethylindium chloride
JournalApplied Physics Letters
AuthorsMori, KazuoAuthor
Sugou, ShigeoAuthor
Kato, YoshitakeAuthor
Usui, AkiraAuthor
Year1992 (April 6)Volume60
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.107480Search in ResearchGate
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Mindat Ref. ID8498189Long-form Identifiermindat:1:5:8498189:7
GUID0
Full ReferenceMori, Kazuo, Sugou, Shigeo, Kato, Yoshitake, Usui, Akira (1992) Growth of InAs and (InAs)1(GaAs)5superlattice by atomic layer epitaxy using dimethylindium chloride. Applied Physics Letters, 60 (14). 1717-1719 doi:10.1063/1.107480
Plain TextMori, Kazuo, Sugou, Shigeo, Kato, Yoshitake, Usui, Akira (1992) Growth of InAs and (InAs)1(GaAs)5superlattice by atomic layer epitaxy using dimethylindium chloride. Applied Physics Letters, 60 (14). 1717-1719 doi:10.1063/1.107480
In(1992, April) Applied Physics Letters Vol. 60 (14) AIP Publishing

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Mori, Kazuo, Yoshida, Masaji, Usui, Akira, Terao, Hiroshi (1988) GaAs growth by atomic layer epitaxy using diethylgalliumchloride. Applied Physics Letters, 52 (1). 27-29 doi:10.1063/1.99306
Usui, Akira, Sunakawa, Haruo, Stützler, Frank J., Ishida, Koichi (1990) InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy. Applied Physics Letters, 56 (3). 289-291 doi:10.1063/1.102811
Saito, Hideaki, Nishi, Kenichi, Sugou, Shigeo (1999) Shape transition of InAs quantum dots by growth at high temperature. Applied Physics Letters, 74 (9). 1224-1226 doi:10.1063/1.123506
Tischler, M. A., Anderson, N. G., Bedair, S. M. (1986) Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy. Applied Physics Letters, 49 (18). 1199-1200 doi:10.1063/1.97413
Ren, Hong-Wen, Nishi, Kenichi, Sugou, Shigeo, Masumoto, Yasuaki (1998) Size Quantization in InAs/GaAs Self-Assembled Quantum Dots Grown by Gas-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 37. 1548-1551 doi:10.1143/jjap.37.1548
Usui, Akira, Sunakawa, Haruo (1986) GaAs Atomic Layer Epitaxy by Hydride VPE. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l212
Lee, Jeong-Sik, Sugou, Shigeo, Masumoto, Yasuaki (1999) Real-Time Observation of Ellipsometry Oscillation during GaAs Layer by Layer Growth by Metalorganic Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l614
Sasaoka, Chiaki, Yoshida, Masaji, Usui, Akira (1988) Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l490
Ren, Hong-Wen, Nishi, Kenichi, Sugou, Shigeo, Sugisaki, Mitsuru, Masumoto, Yasuaki (1997) Control of InAs Self-Assembled Islands on GaAs Vicinal Surfaces by Annealing in Gas-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 36. 4118-4122 doi:10.1143/jjap.36.4118
Goldstein, L., Glas, F., Marzin, J. Y., Charasse, M. N., Le Roux, G. (1985) Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices. Applied Physics Letters, 47 (10). 1099-1101 doi:10.1063/1.96342
Hopkinson, M., David, J. P. R., Claxton, P. A., Kightley, P. (1992) Growth of strained InAs/InP quantum wells by molecular beam epitaxy. Applied Physics Letters, 60 (7). 841-843 doi:10.1063/1.106531
 
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