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Genut, M., Eizenberg, M. (1987) Compound formation at the interface between cobalt thin films and single‐crystal GaAs. Applied Physics Letters, 50 (19). 1358-1360 doi:10.1063/1.97855

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Reference TypeJournal (article/letter/editorial)
TitleCompound formation at the interface between cobalt thin films and single‐crystal GaAs
JournalApplied Physics Letters
AuthorsGenut, M.Author
Eizenberg, M.Author
Year1987 (May 11)Volume50
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97855Search in ResearchGate
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Mindat Ref. ID8480000Long-form Identifiermindat:1:5:8480000:6
GUID0
Full ReferenceGenut, M., Eizenberg, M. (1987) Compound formation at the interface between cobalt thin films and single‐crystal GaAs. Applied Physics Letters, 50 (19). 1358-1360 doi:10.1063/1.97855
Plain TextGenut, M., Eizenberg, M. (1987) Compound formation at the interface between cobalt thin films and single‐crystal GaAs. Applied Physics Letters, 50 (19). 1358-1360 doi:10.1063/1.97855
In(1987, May) Applied Physics Letters Vol. 50 (19) AIP Publishing

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Genut, M., Eizenberg, M. (1989) The interaction between thin films of cobalt and GaAs (001) substrates. Journal of Applied Physics, 66 (11). 5456-5464 doi:10.1063/1.343695
Genut, M., Eizenberg, M. (1988) Correlations between electrical properties and interfacial reactions for cobalt‐germanium contacts ton‐type GaAs. Applied Physics Letters, 53 (8). 672-674 doi:10.1063/1.99846
Lahav, A., Eizenberg, M. (1985) Effect of phase separation on the electrical properties of the interface between Ni‐Ta thin films and GaAs substrate. Applied Physics Letters, 46 (4). 430-432 doi:10.1063/1.95602
Genut, M., Eizenberg, M. (1990) Study of the Co‐Ge/GaAs contact system. Journal of Applied Physics, 68 (5). 2146-2157 doi:10.1063/1.346571
Lahav, A., Eizenberg, M. (1984) Interfacial reactions of Ni‐Ta thin films on GaAs. Applied Physics Letters, 45 (3). 256-258 doi:10.1063/1.95203
Lahav, A., Eizenberg, M., Komem, Y. (1987) Phase separation in reactions of Ni‐Ta thin films with GaAs. Journal of Applied Physics, 62 (5). 1768-1777 doi:10.1063/1.339576
Levit, M., Grimberg, I., Weiss, B.-Z., Eizenberg, M. (1996) Interaction between Ni90Ti10 alloy thin film and Si single crystal. Journal of Applied Physics, 79 (2). 1179pp. doi:10.1063/1.362669
Shiau, F. Y., Chang, Y. A. (1989) Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs. Applied Physics Letters, 55 (15). 1510-1512 doi:10.1063/1.101591
Lahav, A., Eizenberg, M., Komem, Y. (1986) Interfacial reactions between Ni films and GaAs. Journal of Applied Physics, 60 (3). 991-1001 doi:10.1063/1.337343
Sands, David, Brunson, Kevin M., Thomas, Clive B. (1987) Electronic states at the interface between thin films of ZnS and crystallinep‐silicon. Journal of Applied Physics, 62 (4). 1340-1343 doi:10.1063/1.339635
Sung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Si‐SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
 
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