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Goodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K., Ehrlich, D. J. (1987) Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching. Applied Physics Letters, 51 (21). 1726-1728 doi:10.1063/1.98557

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Reference TypeJournal (article/letter/editorial)
TitleNanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching
JournalApplied Physics Letters
AuthorsGoodhue, W. D.Author
Pang, S. W.Author
Johnson, G. D.Author
Astolfi, D. K.Author
Ehrlich, D. J.Author
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98557Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481568Long-form Identifiermindat:1:5:8481568:2
GUID0
Full ReferenceGoodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K., Ehrlich, D. J. (1987) Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching. Applied Physics Letters, 51 (21). 1726-1728 doi:10.1063/1.98557
Plain TextGoodhue, W. D., Pang, S. W., Johnson, G. D., Astolfi, D. K., Ehrlich, D. J. (1987) Nanometer‐scale columns in GaAs fabricated by angled chlorine ion‐beam‐assisted etching. Applied Physics Letters, 51 (21). 1726-1728 doi:10.1063/1.98557
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Grande, W. J., Johnson, John E., Tang, C. L. (1990) GaAs/AlGaAs photonic integrated circuits fabricated using chemically assisted ion beam etching. Applied Physics Letters, 57 (24). 2537-2539 doi:10.1063/1.103848
Le, H. Q., Zayhowski, J. J., Goodhue, W. D. (1987) Stark effect in AlxGa1−xAs/GaAs coupled quantum wells. Applied Physics Letters, 50 (21). 1518-1520 doi:10.1063/1.97818
Chinn, J. D. (1987) Ion beam enhanced magnetron reactive ion etching. Applied Physics Letters, 51 (24). 2007-2009 doi:10.1063/1.98275
Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W., DeGraff, P. D. (1983) Damage induced in Si by ion milling or reactive ion etching. Journal of Applied Physics, 54 (6). 3272-3277 doi:10.1063/1.332437
Chinn, J. D., Adesida, I., Wolf, E. D. (1983) Profile control by chemically assisted ion‐beam and reactive ion beam etching. Applied Physics Letters, 43 (2). 185-187 doi:10.1063/1.94274
Donnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A. (1987) Monolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers. Applied Physics Letters, 51 (15). 1138-1140 doi:10.1063/1.98763
Qian, X., Li, J., Wasserman, D., Goodhue, W. D. (2008) Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography. Applied Physics Letters, 93 (23). 231907pp. doi:10.1063/1.3040683
Bartolo, R. E., Bewley, W. W., Felix, C. L., Vurgaftman, I., Lindle, J. R., Meyer, J. R., Knies, D. L., Grabowski, K. S., Turner, G. W., Manfra, M. J. (2001) Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment. Applied Physics Letters, 78 (22). 3394-3396 doi:10.1063/1.1377044
Maki, P. A., Ehrlich, D. J. (1987) Excimer laserinsitutreatment of GaAs surfaces: Electrical properties of tungsten/GaAs diodes. Applied Physics Letters, 51 (16). 1274-1276 doi:10.1063/1.98703
Dasika, V. D., Goldman, R. S., Song, J. D., Choi, W. J., Cho, N. K., Lee, J. I. (2009) Nanometer-scale measurements of electronic states in InAs∕GaAs quantum dots. Journal of Applied Physics, 106 (1). 14315pp. doi:10.1063/1.3158560
Reynolds, S., Vook, D. W., Opyd, W. G., Gibbons, J. F. (1987) Rapid thermal annealing of Si‐implanted GaAs with trimethylarsenic overpressure. Applied Physics Letters, 51 (12). 916-918 doi:10.1063/1.98800
 
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