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Badoz, P. A., Briggs, A., Rosencher, E., d’Avitaya, F. Arnaud, d’Anterroches, C. (1987) Low‐temperature transport properties of ultrathin CoSi2epitaxial films. Applied Physics Letters, 51 (3). 169-171 doi:10.1063/1.98911

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature transport properties of ultrathin CoSi2epitaxial films
JournalApplied Physics Letters
AuthorsBadoz, P. A.Author
Briggs, A.Author
Rosencher, E.Author
d’Avitaya, F. ArnaudAuthor
d’Anterroches, C.Author
Year1987 (July 20)Volume51
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.98911Search in ResearchGate
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Mindat Ref. ID8481966Long-form Identifiermindat:1:5:8481966:0
GUID0
Full ReferenceBadoz, P. A., Briggs, A., Rosencher, E., d’Avitaya, F. Arnaud, d’Anterroches, C. (1987) Low‐temperature transport properties of ultrathin CoSi2epitaxial films. Applied Physics Letters, 51 (3). 169-171 doi:10.1063/1.98911
Plain TextBadoz, P. A., Briggs, A., Rosencher, E., d’Avitaya, F. Arnaud, d’Anterroches, C. (1987) Low‐temperature transport properties of ultrathin CoSi2epitaxial films. Applied Physics Letters, 51 (3). 169-171 doi:10.1063/1.98911
In(1987, July) Applied Physics Letters Vol. 51 (3) AIP Publishing

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Veuillen, J. Y., Derrien, J., Badoz, P. A., Rosencher, E., d’Anterroches, C. (1987) Co/Si(111) interface: Formation of an initial CoSi2phase at room temperature. Applied Physics Letters, 51 (18). 1448-1450 doi:10.1063/1.98653
Rosencher, E., Badoz, P. A., Pfister, J. C., d’Avitaya, F. Arnaud, Vincent, G., Delage, S. (1986) Study of ballistic transport in Si‐CoSi2‐Si metal base transistors. Applied Physics Letters, 49 (5). 271-273 doi:10.1063/1.97138
Duboz, J. Y., Badoz, P. A., d’Avitaya, F. Arnaud, Chroboczek, J. A. (1989) Electronic transport properties of epitaxial erbium silicide/silicon heterostructures. Applied Physics Letters, 55 (1). 84-86 doi:10.1063/1.102392
Duboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560
Pahun, L., Campidelli, Y., d’Avitaya, F. Arnaud, Badoz, P. A. (1992) Infrared response of Pt/Si/ErSi1.7heterostructure: Tunable internal photoemission sensor. Applied Physics Letters, 60 (10). 1166-1168 doi:10.1063/1.107393
Duboz, J. Y., Badoz, P. A., d’Avitaya, F. Arnaud, Rosencher, E. (1989) Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers. Physical Review B, 40 (15) 10607-10610 doi:10.1103/physrevb.40.10607
Badoz, P.A., Arnaud d'Avitaya, F., Rosencher, E. (1991) Search for quantum size effects in ultrathin epitaxial metallic films. Annales de Physique, 16 (6) 623-638 doi:10.1051/anphys:01991001606062300
Madar, R., d’Anterroches, C., Arnaud d’Avitaya, F., Boursier, D., Thomas, O., Senateur, J. P. (1988) Magnetic and transmission electron microscopy studies of the formation of cobalt silicide thin films. Journal of Applied Physics, 64 (6). 3014-3017 doi:10.1063/1.341564
DiTusa, J. F., Parpia, J. M., Phillips, Julia M. (1990) Quantum transport in ultrathin CoSi2epitaxial films. Applied Physics Letters, 57 (5). 452-454 doi:10.1063/1.103663
Glastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
Badoz, P. A., Rosencher, E., Torres, J., Fishman, G. (1987) Insulating, metallic, or semimetallic electronic nature of XSi2compounds: Application to WSi2. Journal of Applied Physics, 62 (3). 890-895 doi:10.1063/1.339695
 
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