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Glastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266

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Reference TypeJournal (article/letter/editorial)
TitleCoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor
JournalApplied Physics Letters
AuthorsGlastre, G.Author
Rosencher, E.Author
d’Avitaya, F. ArnaudAuthor
Puissant, C.Author
Pons, M.Author
Vincent, G.Author
Pfister, J. C.Author
Year1988 (March 14)Volume52
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.99266Search in ResearchGate
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Mindat Ref. ID8482512Long-form Identifiermindat:1:5:8482512:0
GUID0
Full ReferenceGlastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
Plain TextGlastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
In(1988, March) Applied Physics Letters Vol. 52 (11) AIP Publishing

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Rosencher, E., Badoz, P. A., Pfister, J. C., d’Avitaya, F. Arnaud, Vincent, G., Delage, S. (1986) Study of ballistic transport in Si‐CoSi2‐Si metal base transistors. Applied Physics Letters, 49 (5). 271-273 doi:10.1063/1.97138
Arnaud D'Avitaya, F., Chroboczek, J.A., D'Anterroches, C., Glastre, G., Campidelli, Y., Rosencher, E. (1987) Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistor. Journal of Crystal Growth, 81 (1). 463-469 doi:10.1016/0022-0248(87)90434-9
Andrieu, S., d’Avitaya, F. Arnaud, Pfister, J. C. (1989) Surface segregation mechanism during two‐dimensional epitaxial growth: The case of dopants in Si and GaAs molecular‐beam epitaxy. Journal of Applied Physics, 65 (7). 2681-2687 doi:10.1063/1.342752
d’Avitaya, F. Arnaud, Perio, A., Oberlin, J.‐C., Campidelli, Y., Chroboczek, J. A. (1989) Fabrication and structure of epitaxial Er silicide films on (111) Si. Applied Physics Letters, 54 (22). 2198-2200 doi:10.1063/1.101517
Badoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L. (1990) Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid. Applied Physics Letters, 56 (23). 2307-2309 doi:10.1063/1.102949
Badoz, P. A., Briggs, A., Rosencher, E., d’Avitaya, F. Arnaud, d’Anterroches, C. (1987) Low‐temperature transport properties of ultrathin CoSi2epitaxial films. Applied Physics Letters, 51 (3). 169-171 doi:10.1063/1.98911
Duboz, J. Y., Badoz, P. A., Rosencher, E., Henz, J., Ospelt, M., von Känel, H., Briggs, A. (1988) Electrical transport properties in epitaxial codeposited CoSi2layers on 〈111〉 Si. Applied Physics Letters, 53 (9). 788-790 doi:10.1063/1.100560
Liniger, M., Kholod, Alexander N., Ménard, S., Borisenko, V. E., Bassani, F., Guirleo, G., Arnaud d’Avitaya, F. (2001) Carrier dynamics modeling in a precharged Si/CaF2 heterostructure. Journal of Applied Physics, 89 (11). 6281-6284 doi:10.1063/1.1367878
Nouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
Ioannou-Sougleridis, V., Nassiopoulou, A. G., Ouisse, T., Bassani, F., Arnaud d’Avitaya, F. (2001) Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices. Applied Physics Letters, 79 (13). 2076-2078 doi:10.1063/1.1405004
La Ferla, A., Rimini, E., Ferla, G. (1988) Ion‐induced epitaxial growth of chemical vapor deposited Si layers. Applied Physics Letters, 52 (9). 712-714 doi:10.1063/1.99355
 
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