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Badoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L. (1990) Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid. Applied Physics Letters, 56 (23). 2307-2309 doi:10.1063/1.102949

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Reference TypeJournal (article/letter/editorial)
TitlePermeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid
JournalApplied Physics Letters
AuthorsBadoz, P. A.Author
Bensahel, D.Author
Guérin, L.Author
Puissant, C.Author
Regolini, J. L.Author
Year1990 (June 4)Volume56
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.102949Search in ResearchGate
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Mindat Ref. ID8490627Long-form Identifiermindat:1:5:8490627:6
GUID0
Full ReferenceBadoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L. (1990) Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid. Applied Physics Letters, 56 (23). 2307-2309 doi:10.1063/1.102949
Plain TextBadoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L. (1990) Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2grid. Applied Physics Letters, 56 (23). 2307-2309 doi:10.1063/1.102949
In(1990, June) Applied Physics Letters Vol. 56 (23) AIP Publishing

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Regolini, J. L., Bensahel, D., Scheid, E., Mercier, J. (1989) Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane. Applied Physics Letters, 54 (7). 658-659 doi:10.1063/1.100910
Nissim, Y. I., Sapriel, J., Gao, Y., d’Anterroches, C., Regolini, J. L., Bensahel, D. (1991) Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process. Applied Physics Letters, 59 (6). 656-658 doi:10.1063/1.105383
Pares, G., Regolini, J. L., Mercier, J., Dutartre, D., Bensahel, D. (1990) Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system. Journal of Applied Physics, 68 (9). 4885-4887 doi:10.1063/1.346121
Bensahel, D., Regolini, J. L., Mercier, J. (1989) Kinetics aspects of TiSi2deposition without silicon consumption. Applied Physics Letters, 55 (15). 1549-1551 doi:10.1063/1.102306
Glastre, G., Rosencher, E., d’Avitaya, F. Arnaud, Puissant, C., Pons, M., Vincent, G., Pfister, J. C. (1988) CoSi2and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters, 52 (11). 898-900 doi:10.1063/1.99266
Trincat, F., Regolini, J. L., Mercier, J., Bensahel, D. (1991) Selective WSi2Schottky diodes made by rapid thermal chemical vapor deposition of WCl6. Applied Physics Letters, 59 (25). 3291-3293 doi:10.1063/1.105709
Regolini, J.L., Bensahel, D., Mercier, J., Scheid, E. (1989) Silicon selective epitaxial growth at reduced pressure and temperature. Journal of Crystal Growth, 96 (3). 505-512 doi:10.1016/0022-0248(89)90045-6
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy. Applied Physics Letters, 56 (26). 2645-2647 doi:10.1063/1.102863
Regolini, J. L., Trincat, F., Berbezier, I., Shapira, Y. (1992) Selective and epitaxial deposition of β‐FeSi2 on silicon by rapid thermal processing‐chemical vapor deposition using a solid iron source. Applied Physics Letters, 60 (8). 956-958 doi:10.1063/1.106473
Hsieh, T. Y., Jung, K. H., Kwong, D. L. (1990) Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (23). 2425-2427 doi:10.1063/1.103865
Mercier, J., Regolini, J.L., Bensahel, D., Scheid, E. (1989) Kinetic aspects of selective epitaxial growth using a rapid thermal processing system. Journal of Crystal Growth, 94 (4). 885-894 doi:10.1016/0022-0248(89)90121-8
 
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