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Yoshida, A., Setsune, K., Hirao, T. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique. Applied Physics Letters, 51 (4). 253-255 doi:10.1063/1.98464

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Reference TypeJournal (article/letter/editorial)
TitlePhosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique
JournalApplied Physics Letters
AuthorsYoshida, A.Author
Setsune, K.Author
Hirao, T.Author
Year1987 (July 27)Volume51
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.98464Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482018Long-form Identifiermindat:1:5:8482018:9
GUID0
Full ReferenceYoshida, A., Setsune, K., Hirao, T. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique. Applied Physics Letters, 51 (4). 253-255 doi:10.1063/1.98464
Plain TextYoshida, A., Setsune, K., Hirao, T. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique. Applied Physics Letters, 51 (4). 253-255 doi:10.1063/1.98464
In(1987, July) Applied Physics Letters Vol. 51 (4) AIP Publishing

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Kitagawa, M., Setsune, K., Manabe, Y., Hirao, T. (1987) Preparation of doped hydrogenated amorphous silicon films by microwave electron‐cyclotron‐resonance plasma discharge deposition. Journal of Applied Physics, 61 (5). 2084-2087 doi:10.1063/1.338013
Hamanaka, H., Kuriyama, K., Yahagi, M., Satoh, M., Iwamura, K., Kim, C., Kim, Y., Shiraishi, F., Tsuji, K., Minomura, S. (1984) Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique. Applied Physics Letters, 45 (7). 786-788 doi:10.1063/1.95366
Deguchi, Masahiro, Yoshida, Akihisa, Kitagawa, Masatoshi, Hirao, Takashi (1990) β -SiC Formation by Low-Energy Ion-Doping Technique. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l1493
Winer, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881
Bapat, D. R., Narasimhan, K. L., Kumar, Shailendra, Sardesai, A., Kshirsagar, S. T. (1989) Efficient phosphorus doping of amorphous silicon carbide films. Applied Physics Letters, 55 (16). 1639-1640 doi:10.1063/1.102223
Jang, Jin, Park, Seung Chul, Kim, Sung Chul, Lee, Choochon (1987) Increase of doping efficiency by light soaking in boron‐doped hydrogenated amorphous silicon. Applied Physics Letters, 51 (22). 1804-1806 doi:10.1063/1.98528
Yoshida, Akihisa, Kitagawa, Masatoshi, Setsune, Kentaro, Hirao, Takashi (1988) Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1355
Kitagawa, Masatoshi, Ishihara, Shin-ichiro, Setsune, Kentaro, Manabe, Yoshio, Hirao, Takashi (1987) Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l231
Asano, A., Sakai, H. (1989) Improvement in the boron doping efficiency of hydrogenated amorphous silicon carbide films using BF3. Applied Physics Letters, 54 (10). 904-906 doi:10.1063/1.100803
Seto, Junichi, Ohdaira, Keisuke, Matsumura, Hideki (2016) Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films. Japanese Journal of Applied Physics, 55 (4) 4 doi:10.7567/jjap.55.04es05
Basu, N., Ganguly, Gautam, Ray, Swati, Barua, A. K. (1989) Phosphorus Doping and Photoinduced Changes in Hydrogenated Amorphous Silicon-Carbon Alloy Films. Japanese Journal of Applied Physics, 28. 1776-1779 doi:10.1143/jjap.28.1776
 
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