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Winer, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881

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Reference TypeJournal (article/letter/editorial)
TitleInterfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon
JournalApplied Physics Letters
AuthorsWiner, K.Author
Street, R. A.Author
Year1988 (August 8)Volume53
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.99881Search in ResearchGate
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Mindat Ref. ID8485588Long-form Identifiermindat:1:5:8485588:4
GUID0
Full ReferenceWiner, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881
Plain TextWiner, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881
In(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing

See Also

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Street, R. A. (1991) Current‐induced defect creation and recovery in hydrogenated amorphous silicon. Applied Physics Letters, 59 (9). 1084-1086 doi:10.1063/1.106351
Winer, K., Street, R. A. (1989) Interstitial Li doping ofa‐Si:H. Journal of Applied Physics, 65 (6). 2272-2281 doi:10.1063/1.342841
Street, R. A. (1983) Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon. Applied Physics Letters, 42 (6). 507-509 doi:10.1063/1.93984
Street, R. A., Zesch, J., Thompson, M. J. (1983) Effects of doping on transport and deep trapping in hydrogenated amorphous silicon. Applied Physics Letters, 43 (7). 672-674 doi:10.1063/1.94441
Street, R. A. (1982) Trapping parameters of dangling bonds in hydrogenated amorphous silicon. Applied Physics Letters, 41 (11). 1060-1062 doi:10.1063/1.93400
Gelatos, A. V., Kanicki, J. (1990) Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct?. Applied Physics Letters, 57 (12). 1197-1199 doi:10.1063/1.103484
Hack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
Winer, K. (1989) Dependence of optimal growth temperature on carbon content in hydrogenated amorphous silicon carbide alloys. Applied Physics Letters, 55 (17). 1759-1761 doi:10.1063/1.102209
Beyer, W., Fischer, R. (1977) Interstitial doping of amorphous silicon. Applied Physics Letters, 31 (12). 850-852 doi:10.1063/1.89573
Yoshida, A., Setsune, K., Hirao, T. (1987) Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique. Applied Physics Letters, 51 (4). 253-255 doi:10.1063/1.98464
Chen, Yang‐Fang (1988) Elimination of light‐induced effect in hydrogenated amorphous silicon. Applied Physics Letters, 53 (14). 1277-1278 doi:10.1063/1.100404
 
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