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(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (August)Volume53
Issue<   6   >
PublisherAIP Publishing
Mindat Ref. ID8485537Long-form Identifiermindat:1:5:8485537:0
GUID0
Full Reference(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing
Plain Text(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 53. AIP Publishing

Contains

Baillargeon, J. N., York, P. K., Zmudzinski, C. A., Fernández, G. E., Beernink, K. J., Coleman, J. J. (1988) High‐power phase‐locked InGaAs strained‐layer quantum well heterostructure periodic laser array. Applied Physics Letters, 53 (6). 457-459 doi:10.1063/1.99883
Lloyd, A. D., Wherrett, B. S. (1988) All‐optical bistability in nematic liquid crystals at 20 ÎŒW power levels. Applied Physics Letters, 53 (6). 460-461 doi:10.1063/1.99884
Shani, Y., Katzir, A., Tacke, M., Preier, H. M. (1988) Highly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 53 (6). 462-463 doi:10.1063/1.100399
Botez, D., Mawst, L., Hayashida, P., Peterson, G., Roth, T. J. (1988) High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’ waveguides (antiguides). Applied Physics Letters, 53 (6). 464-466 doi:10.1063/1.99885
Lucente, M., Carter, G. M., Fujimoto, J. G. (1988) Nonlinear mixing and phase conjugation in broad‐area diode lasers. Applied Physics Letters, 53 (6). 467-469 doi:10.1063/1.99871
SauvĂ©, G., Moisan, M., Paraszczak, J., Heidenreich, J. (1988) Influence of the applied field frequency (27–2450 MHz) in high‐frequency sustained plasmas used to etch polyimide. Applied Physics Letters, 53 (6). 470-472 doi:10.1063/1.99872
Uedono, A., Tanigawa, S., Suzuki, K., Watanabe, K. (1988) Variable‐energy positron‐beam studies of SiO2/Si irradiated by ionizing radiation. Applied Physics Letters, 53 (6). 473-475 doi:10.1063/1.100616
Liu, X., Petrou, A., Jonker, B. T., Prinz, G. A., Krebs, J. J., Warnock, J. (1988) Photoluminescence and magnetoreflectivity study of Zn1−xFexSe epilayers. Applied Physics Letters, 53 (6). 476-478 doi:10.1063/1.99873
Ben Amor, S., Dmowski, L., Portal, J. C., Praseuth, J. P., Goldstein, L. (1988) Two‐dimensional electron gas at a Ga0.47In0.53As/ (AlxGa1−x)0.48In0.52As interface. Applied Physics Letters, 53 (6). 479-481 doi:10.1063/1.99874
Warren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
Liu, H. C. (1988) Simulation of extrinsic bistability of resonant tunneling structures. Applied Physics Letters, 53 (6). 485-486 doi:10.1063/1.99875
Hosaka, Sumio, Hosoki, Shigeyuki, Takata, Keiji, Horiuchi, Katsutada, Natsuaki, Nobuyoshi (1988) Observation ofpnjunctions on implanted silicon using a scanning tunneling microscope. Applied Physics Letters, 53 (6). 487-489 doi:10.1063/1.99876
Hayes, J. R., Harbison, J. P. (1988) Hot‐electron transport in a graded band‐gap base heterojunction bipolar transistor. Applied Physics Letters, 53 (6). 490-492 doi:10.1063/1.99877
Agarwala, S., Patil, M. B., Peng, C. K., Morkoç, H. (1988) Al0.3Ga0.7As/GaAs metal‐insulator‐semiconductor‐type field‐effect transistor fabricated on an InP substrate. Applied Physics Letters, 53 (6). 493-494 doi:10.1063/1.99878
Taira, K., Kawai, H., Hase, I., Kaneko, K., Watanabe, N. (1988) Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (6). 495-496 doi:10.1063/1.99879
Massoud, Hisham Z. (1988) Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen. Applied Physics Letters, 53 (6). 497-499 doi:10.1063/1.100618
Shen, Dingli, Zhang, Kaiming, Fu, Rouli (1988) Theoretical approach to the electronic states and core exciton of superlattice ZnSe/GaAs. Applied Physics Letters, 53 (6). 500-502 doi:10.1063/1.99880
Tamura, Akiyoshi, Inoue, Kaoru, Onuma, Takeshi (1988) Enhancement in activation efficiency for a SiF3‐implanted GaAs layer by a new annealing method. Applied Physics Letters, 53 (6). 503-504 doi:10.1063/1.100619
Winer, K., Street, R. A. (1988) Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon. Applied Physics Letters, 53 (6). 505-507 doi:10.1063/1.99881
Brower, K. L. (1988) Passivation of paramagnetic Si‐SiO2interface states with molecular hydrogen. Applied Physics Letters, 53 (6). 508-510 doi:10.1063/1.100620
Adekoya, W. O., Hage‐Ali, M., Muller, J. C., Siffert, P. (1988) Dose effects during solid phase epitaxial regrowth of boron‐implanted, germanium‐amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, 53 (6). 511-513 doi:10.1063/1.99882
Croke, E. T., Hauenstein, R. J., McGill, T. C. (1988) Growth of superconducting V3Si on Si by molecular beam epitaxial techniques. Applied Physics Letters, 53 (6). 514-516 doi:10.1063/1.100621
Chang, C. C., Wu, X. D., Inam, A., Hwang, D. M., Venkatesan, T., Barboux, P., Tarascon, J. M. (1988) Smooth highTcY1Ba2Cu3Oxfilms by laser deposition at 650 °C. Applied Physics Letters, 53 (6). 517-519 doi:10.1063/1.100622
Ramesh, R., Thomas, G., Green, S. M., Rudee, M. L., Luo, H. L. (1988) Structure and composition of the 115 K superconducting phase in the Bi‐Ca‐Sr‐Cu‐O system. Applied Physics Letters, 53 (6). 520-522 doi:10.1063/1.100623
Shih, I., Qiu, C. X. (1988) Multilayer deposition of Tl‐Ba‐Ca‐Cu‐O films. Applied Physics Letters, 53 (6). 523-525 doi:10.1063/1.100624
Mantese, J. V., Catalan, A. B., Hamdi, A. H., Micheli, A. L., Studer‐Rabeler, K. (1988) Use of electron beam lithography to selectively decompose metalorganics into patterned thin‐film superconductors. Applied Physics Letters, 53 (6). 526-528 doi:10.1063/1.100625
Lindberg, P. A. P., Shen, Z.‐X., Lindau, I., Spicer, W. E., Eom, C. B., Geballe, T. H. (1988) Photoemission study of the surface electronic structure of Bi‐Ca‐Sr‐Cu‐O superconductors modified by Ne sputtering, Ag deposition, and heat treatment. Applied Physics Letters, 53 (6). 529-531 doi:10.1063/1.100626
Guarnieri, C. Richard, Roy, R. A., Saenger, K. L., Shivashankar, S. A., Yee, D. S., Cuomo, J. J. (1988) Thin‐film Bi‐Sr‐Ca‐Cu‐O high‐temperature superconductors using pulsed laser evaporation from sintered disks. Applied Physics Letters, 53 (6). 532-533 doi:10.1063/1.100627
Dyer, P. E., Greenough, R. D., Issa, A., Key, P. H. (1988) Spectroscopic and ion probe measurements of KrF laser ablated Y‐Ba‐Cu‐O bulk samples. Applied Physics Letters, 53 (6). 534-536 doi:10.1063/1.100628
Jiang, B. L., Shimura, F., Rozgonyi, G. A., Hamaguchi, N., Bedair, S. M. (1988) Erratum: Single‐crystal x‐ray diffraction study of the InGaAs‐GaAsP/GaAs superlattice system [Appl. Phys. Lett. 52, 1258 (1988)]. Applied Physics Letters, 53 (6). 537 doi:10.1063/1.100420

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