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Shani, Y., Katzir, A., Tacke, M., Preier, H. M. (1988) Highly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 53 (6). 462-463 doi:10.1063/1.100399

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Reference TypeJournal (article/letter/editorial)
TitleHighly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers
JournalApplied Physics Letters
AuthorsShani, Y.Author
Katzir, A.Author
Tacke, M.Author
Preier, H. M.Author
Year1988 (August 8)Volume53
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.100399Search in ResearchGate
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Mindat Ref. ID8485536Long-form Identifiermindat:1:5:8485536:1
GUID0
Full ReferenceShani, Y., Katzir, A., Tacke, M., Preier, H. M. (1988) Highly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 53 (6). 462-463 doi:10.1063/1.100399
Plain TextShani, Y., Katzir, A., Tacke, M., Preier, H. M. (1988) Highly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 53 (6). 462-463 doi:10.1063/1.100399
In(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing

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Shani, Y., Katzir, A., Bachem, K.‐H., Norton, P., Tacke, M., Preier, H. M. (1986) 77 K cw operation of distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 48 (18). 1178-1180 doi:10.1063/1.96461
Shani, Y., Rosman, R., Katzir, A., Norton, P., Tacke, M., Preier, H. M. (1988) Distributed Bragg reflector Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers with a broad single‐mode tuning range. Journal of Applied Physics, 63 (11). 5603-5606 doi:10.1063/1.340341
Tacke, M., Spanger, Beate, Lambrecht, A., Norton, P. R., Böttner, H. (1988) Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe. Applied Physics Letters, 53 (23). 2260-2262 doi:10.1063/1.100247
Spanger, Beate, Schiessl, U., Lambrecht, A., Böttner, H., Tacke, M. (1988) Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques. Applied Physics Letters, 53 (26). 2582-2583 doi:10.1063/1.100208
Zogg, H., Maissen, C., Masek, J., Blunier, S., Lambrecht, A., Tacke, M. (1989) Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength. Applied Physics Letters, 55 (10). 969-971 doi:10.1063/1.101692
Eger, D., Oron, M., Zemel, A., Zussman, A. (1981) Tunneling‐determined threshold current in Pb1−xSnxTe diode lasers. Applied Physics Letters, 39 (6). 471-473 doi:10.1063/1.92777
Butler, J. F., Calawa, A. R., Harman, T. C. (1966) DIODE LASERS OF Pb1−ySnySe AND Pb1−xSnxTe. Applied Physics Letters, 9 (12). 427-429 doi:10.1063/1.1754640
Harman, T. C., Calawa, A. R., Melngailis, I., Dimmock, J. O. (1969) TEMPERATURE AND COMPOSITIONAL DEPENDENCE OF LASER EMISSION IN Pb1−xSnxSe. Applied Physics Letters, 14 (11). 333-334 doi:10.1063/1.1652675
Kapon, Eli, Zussman, A., Katzir, A. (1984) Distributed Bragg reflector lattice‐matched Pb1−xSnxTe/PbSeyTe1−ydiode lasers. Applied Physics Letters, 44 (3). 275-277 doi:10.1063/1.94745
Koguchi, N., Takahashi, S. (1991) Double‐heterostructure Pb1−x−yCdxSryS/PbS/Pb1−x−yCdxSryS lasers grown by molecular beam epitaxy. Applied Physics Letters, 58 (8). 799-800 doi:10.1063/1.104493
Butler, J. F., Harman, T. C. (1968) LONG‐WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS. Applied Physics Letters, 12 (10). 347-349 doi:10.1063/1.1651847
 
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