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Spanger, Beate, Schiessl, U., Lambrecht, A., Böttner, H., Tacke, M. (1988) Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques. Applied Physics Letters, 53 (26). 2582-2583 doi:10.1063/1.100208

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Reference TypeJournal (article/letter/editorial)
TitleNear‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques
JournalApplied Physics Letters
AuthorsSpanger, BeateAuthor
Schiessl, U.Author
Lambrecht, A.Author
Böttner, H.Author
Tacke, M.Author
Year1988 (December 26)Volume53
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.100208Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485280Long-form Identifiermindat:1:5:8485280:5
GUID0
Full ReferenceSpanger, Beate, Schiessl, U., Lambrecht, A., Böttner, H., Tacke, M. (1988) Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques. Applied Physics Letters, 53 (26). 2582-2583 doi:10.1063/1.100208
Plain TextSpanger, Beate, Schiessl, U., Lambrecht, A., Böttner, H., Tacke, M. (1988) Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques. Applied Physics Letters, 53 (26). 2582-2583 doi:10.1063/1.100208
In(1988, December) Applied Physics Letters Vol. 53 (26) AIP Publishing

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Tacke, M., Spanger, Beate, Lambrecht, A., Norton, P. R., Böttner, H. (1988) Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe. Applied Physics Letters, 53 (23). 2260-2262 doi:10.1063/1.100247
Lambrecht, A., Herres, N., Spanger, B., Kuhn, S., Böttner, H., Tacke, M., Evers, J. (1991) Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices. Journal of Crystal Growth, 108 (1). 301-308 doi:10.1016/0022-0248(91)90377-h
Shi, Z., Tacke, M., Lambrecht, A., Böttner, H. (1995) Midinfrared lead salt multi‐quantum‐well diode lasers with 282 K operation. Applied Physics Letters, 66 (19). 2537-2539 doi:10.1063/1.113159
Shani, Y., Katzir, A., Tacke, M., Preier, H. M. (1988) Highly collimated laser beams from grating coupled emission Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 53 (6). 462-463 doi:10.1063/1.100399
Choi, H. K., Eglash, S. J. (1991) Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy. Applied Physics Letters, 59 (10). 1165-1166 doi:10.1063/1.105544
Shani, Y., Katzir, A., Bachem, K.‐H., Norton, P., Tacke, M., Preier, H. M. (1986) 77 K cw operation of distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe diode lasers. Applied Physics Letters, 48 (18). 1178-1180 doi:10.1063/1.96461
Krska, R., Kellner, R., Schiessl, U., Tacke, M., Katzir, A. (1993) Fiber optic sensor for chlorinated hydrocarbons in water based on infrared fibers and tunable diode lasers. Applied Physics Letters, 63 (14). 1868-1870 doi:10.1063/1.110657
Chiu, T. H., Tsang, W. T., Ditzenberger, J. A., van der Ziel, J. P. (1986) Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy. Applied Physics Letters, 49 (17). 1051-1052 doi:10.1063/1.97471
Shani, Y., Rosman, R., Katzir, A., Norton, P., Tacke, M., Preier, H. M. (1988) Distributed Bragg reflector Pb1−xSnxSe/Pb1−x−yEuySnxSe diode lasers with a broad single‐mode tuning range. Journal of Applied Physics, 63 (11). 5603-5606 doi:10.1063/1.340341
Herrmann, K. H., Möllmann, K.‐P., Tomm, J. W., Böttner, H., Lambrecht, A., Tacke, M. (1992) Some band structure related optical and photoelectrical properties of Pb1−xEuxSe (0≤x≤0.2). Journal of Applied Physics, 72 (4). 1399-1404 doi:10.1063/1.351752
Schnitzer, I., Katzir, A., Schiessl, U., Riedel, W. J., Tacke, M. (1989) Fiber‐optic‐based evanescent field chemical sensor using tunable diode lasers for the midinfrared spectral region. Journal of Applied Physics, 66 (11). 5667-5670 doi:10.1063/1.343635
 
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