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Warren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617

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Reference TypeJournal (article/letter/editorial)
TitleNeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide
JournalApplied Physics Letters
AuthorsWarren, W. L.Author
Lenahan, P. M.Author
Robinson, B.Author
Stathis, J. H.Author
Year1988 (August 8)Volume53
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.100617Search in ResearchGate
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Mindat Ref. ID8485544Long-form Identifiermindat:1:5:8485544:0
GUID0
Full ReferenceWarren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
Plain TextWarren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
In(1988, August) Applied Physics Letters Vol. 53 (6) AIP Publishing

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Warren, W. L., Lenahan, P. M. (1989) 29Si hyperfine spectra and structure ofE’ dangling‐bond defects in plasma‐enhanced chemical‐vapor deposited silicon dioxide films on silicon. Journal of Applied Physics, 66 (11). 5488-5491 doi:10.1063/1.344464
Buchanan, D. A., Stathis, J. H., Wagner, P. R. (1990) Trapped positive charge in plasma‐enhanced chemical vapor deposited silicon dioxide films. Applied Physics Letters, 56 (11). 1037-1039 doi:10.1063/1.103327
Jousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M. (1988) Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 52 (6). 445-447 doi:10.1063/1.99438
Warren, W. L., Lenahan, P. M. (1991) Comment on ‘‘E’ centers and nitrogen‐related defects in silicon dioxide films’’. Applied Physics Letters, 59 (22). 2904 doi:10.1063/1.105847
Ohi, S., Burger, W. R., Reif, R. (1988) Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition. Applied Physics Letters, 53 (10). 891-893 doi:10.1063/1.100106
Haque, M. S., Naseem, H. A., Brown, W. D. (1997) Correlation of stress behavior with hydrogen-related impurities in plasma-enhanced chemical vapor deposited silicon dioxide films. Journal of Applied Physics, 82 (6). 2922-2932 doi:10.1063/1.366126
Robinson, Bennett, McFeely, F. R. (1989) Soft x‐ray photoemission study of downstream plasma enhanced chemical vapor deposited SiO2. Journal of Applied Physics, 66 (9). 4431-4434 doi:10.1063/1.343938
Warren, W. L., Kanicki, J., Robertson, J., Lenahan, P. M. (1991) Energy level of the nitrogen dangling bond in amorphous silicon nitride. Applied Physics Letters, 59 (14). 1699-1701 doi:10.1063/1.106222
Andosca, R. G., Varhue, W. J., Adams, E. (1992) Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Journal of Applied Physics, 72 (3). 1126-1132 doi:10.1063/1.351789
Zvanut, M. E., Feigl, F. J., Fowler, W. B., Rudra, J. K., Caplan, P. J., Poindexter, E. H., Zook, J. D. (1989) RechargeableE’ centers in sputter‐deposited silicon dioxide films. Applied Physics Letters, 54 (21). 2118-2120 doi:10.1063/1.101512
Shufflebotham, P. K., Thomson, D. J., Card, H. C. (1988) Behavior of downstream plasmas generated in a microwave plasma chemical‐vapor deposition reactor. Journal of Applied Physics, 64 (9). 4398-4403 doi:10.1063/1.342467
 
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