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Jousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M. (1988) Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 52 (6). 445-447 doi:10.1063/1.99438

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Reference TypeJournal (article/letter/editorial)
TitleElectron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride
JournalApplied Physics Letters
AuthorsJousse, D.Author
Kanicki, J.Author
Krick, D. T.Author
Lenahan, P. M.Author
Year1988 (February 8)Volume52
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.99438Search in ResearchGate
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Mindat Ref. ID8483735Long-form Identifiermindat:1:5:8483735:6
GUID0
Full ReferenceJousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M. (1988) Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 52 (6). 445-447 doi:10.1063/1.99438
Plain TextJousse, D., Kanicki, J., Krick, D. T., Lenahan, P. M. (1988) Electron‐spin‐resonance study of defects in plasma‐enhanced chemical vapor deposited silicon nitride. Applied Physics Letters, 52 (6). 445-447 doi:10.1063/1.99438
In(1988, February) Applied Physics Letters Vol. 52 (6) AIP Publishing

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Krick, D. T., Lenahan, P. M., Kanicki, J. (1988) Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study. Journal of Applied Physics, 64 (7). 3558-3563 doi:10.1063/1.341499
Krick, David T., Lenahan, P. M., Kanicki, J. (1987) Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 51 (8). 608-610 doi:10.1063/1.98362
Curry, Sean E., Lenahan, P. M., Krick, D. T., Kanicki, J., Kirk, C. T. (1990) Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films. Applied Physics Letters, 56 (14). 1359-1361 doi:10.1063/1.102514
Krick, D. T., Lenahan, P. M., Kanicki, J. (1988) Nature of the dominant deep trap in amorphous silicon nitride. Physical Review B, 38 (12) 8226-8229 doi:10.1103/physrevb.38.8226
Warren, W. L., Lenahan, P. M., Robinson, B., Stathis, J. H. (1988) NeutralE’ centers in microwave downstream plasma‐enhanced chemical‐vapor‐deposited silicon dioxide. Applied Physics Letters, 53 (6). 482-484 doi:10.1063/1.100617
Kanicki, J., Hug, S. (1989) Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride. Applied Physics Letters, 54 (8). 733-735 doi:10.1063/1.100876
Jousse, D., Kanicki, J., Stathis, J.H. (1989) Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride. Applied Surface Science, 39. 412-419 doi:10.1016/0169-4332(89)90458-3
Jousse, D., Kanicki, J., Stathis, J. H. (1989) Observation of multiple silicon dangling bond configurations in silicon nitride. Applied Physics Letters, 54 (11). 1043-1045 doi:10.1063/1.101558
Kang, A. Y., Lenahan, P. M., Conley, J. F., Solanki, R. (2002) Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si. Applied Physics Letters, 81 (6). 1128-1130 doi:10.1063/1.1494123
Jousse, D., Kanicki, J. (1989) Investigation of the light‐induced effects in nitrogen‐rich silicon nitride films. Applied Physics Letters, 55 (11). 1112-1114 doi:10.1063/1.101673
Warren, W. L., Lenahan, P. M. (1989) 29Si hyperfine spectra and structure ofE’ dangling‐bond defects in plasma‐enhanced chemical‐vapor deposited silicon dioxide films on silicon. Journal of Applied Physics, 66 (11). 5488-5491 doi:10.1063/1.344464
 
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