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(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (September)Volume53
Issue<   12   >
PublisherAIP Publishing
Mindat Ref. ID8484142Long-form Identifiermindat:1:5:8484142:9
GUID0
Full Reference(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing
Plain Text(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 53. AIP Publishing

Contains

Goossen, K. W., Lyon, S. A., Alavi, K. (1988) Grating enhancement of quantum well detector response. Applied Physics Letters, 53 (12). 1027-1029 doi:10.1063/1.100054
Mundinger, D., Beach, R., Benett, W., Solarz, R., Krupke, W., Staver, R., Tuckerman, D. (1988) Demonstration of high‐performance silicon microchannel heat exchangers for laser diode array cooling. Applied Physics Letters, 53 (12). 1030-1032 doi:10.1063/1.100055
Yariv, Amnon (1988) Scaling laws and minimum threshold currents for quantum‐confined semiconductor lasers. Applied Physics Letters, 53 (12). 1033-1035 doi:10.1063/1.100056
Koch, T. L., Koren, U., Miller, B. I. (1988) High performance tunable 1.5 Îźm InGaAs/InGaAsP multiple quantum well distributed Bragg reflector lasers. Applied Physics Letters, 53 (12). 1036-1038 doi:10.1063/1.100057
Ringhofer, K. H., Solymar, L. (1988) New gain mechanism for wave amplification in photorefractive materials. Applied Physics Letters, 53 (12). 1039-1040 doi:10.1063/1.100058
Gruhlke, R. W., Hall, D. G. (1988) Transmission of molecular fluorescence through a thin metal film by surface plasmons. Applied Physics Letters, 53 (12). 1041-1042 doi:10.1063/1.100059
McKie, A. D. W., Wagner, J. W. (1988) Optical sensing of in‐plane ultrasonic transients. Applied Physics Letters, 53 (12). 1043-1044 doi:10.1063/1.100060
Meyer, Gerhard, Amer, Nabil M. (1988) Novel optical approach to atomic force microscopy. Applied Physics Letters, 53 (12). 1045-1047 doi:10.1063/1.100061
Singmaster, K. A., Houle, F. A., Wilson, R. J. (1988) Origin of contaminants in photochemically deposited chromium films. Applied Physics Letters, 53 (12). 1048-1050 doi:10.1063/1.100062
Schwarz, S. A., Mei, P., Venkatesan, T., Bhat, R., Hwang, D. M., Schwartz, C. L., Koza, M., Nazar, L., Skromme, B. J. (1988) InGaAs/InP superlattice mixing induced by Zn or Si diffusion. Applied Physics Letters, 53 (12). 1051-1053 doi:10.1063/1.100406
Ohkubo, Norio, Chichibu, Shigefusa, Matsumoto, Satoru (1988) Effect of carbon concentration on the thermal conversion of liquid‐encapsulated Czochralski semi‐insulating GaAs. Applied Physics Letters, 53 (12). 1054-1055 doi:10.1063/1.100063
Capasso, Federico, Sen, Susanta, Cho, Alfred Y., Sivco, Deborah L. (1988) Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling. Applied Physics Letters, 53 (12). 1056-1058 doi:10.1063/1.100064
Liu, D., Zhang, T., LaRue, R. A., Harris, J. S., Sigmon, T. W. (1988) Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides. Applied Physics Letters, 53 (12). 1059-1061 doi:10.1063/1.100065
Hua, B. Y., Fortin, E., Roth, A. P., Masut, R. A. (1988) Photovoltaic spectroscopy of InGaAs/GaAs superlattices. Applied Physics Letters, 53 (12). 1062-1064 doi:10.1063/1.100066
Katz, A., Alfano, R. R. (1988) Intervalley scattering rates in GaAs measured by time‐resolved four‐wave mixing spectroscopy. Applied Physics Letters, 53 (12). 1065-1067 doi:10.1063/1.100067
Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1988) Oxygen diffusion in antimony‐doped silicon. Applied Physics Letters, 53 (12). 1068-1070 doi:10.1063/1.100068
De Boeck, J., Liang, J. B., Deneffe, K., Vanhellemont, J., Arent, D. J., Van Hoof, C., Mertens, R., Borghs, G. (1988) Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1071-1073 doi:10.1063/1.100069
Kuriyama, K., Kawahara, H., Satoh, M., Kawakubo, T. (1988) γ‐ray enhanced quenching phenomenon of photoconductance in undoped and In‐doped semi‐insulating GaAs. Applied Physics Letters, 53 (12). 1074-1076 doi:10.1063/1.100070
Ogawa, K., Katsuyama, T., Nakamura, H. (1988) Time‐of‐flight measurement of excitonic polaritons in a GaAs/AlGaAs quantum well. Applied Physics Letters, 53 (12). 1077-1079 doi:10.1063/1.100071
Shen, H., Pan, S. H., Hang, Z., Leng, Jing, Pollak, Fred H., Woodall, J. M., Sacks, R. N. (1988) Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C. Applied Physics Letters, 53 (12). 1080-1082 doi:10.1063/1.100027
Hack, M., Street, R. A. (1988) Realistic modeling of the electronic properties of doped amorphous silicon. Applied Physics Letters, 53 (12). 1083-1085 doi:10.1063/1.100028
Collins, R. W. (1988) Insitustudy ofp‐type amorphous silicon growth from B2H6:SiH4mixtures: Surface reactivity and interface effects. Applied Physics Letters, 53 (12). 1086-1088 doi:10.1063/1.100029
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
Chyi, J.‐I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H. (1988) Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1092-1094 doi:10.1063/1.100031
Bozso, F., Avouris, Ph. (1988) Electron‐induced chemical vapor deposition by reactions induced in adsorbed molecular layers. Applied Physics Letters, 53 (12). 1095-1097 doi:10.1063/1.100655
Fritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
Rosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033
Moslehi, Mehrdad M., Kermani, Ahmad, Saraswat, Krishna C. (1988) Linearly ramped temperature transient rapid thermal oxidation of silicon. Applied Physics Letters, 53 (12). 1104-1106 doi:10.1063/1.100656
Hilton, G. C., Harris, E. B., Van Harlingen, D. J. (1988) Growth, patterning, and weak‐link fabrication of superconducting YBa2Cu3O7−xthin films. Applied Physics Letters, 53 (12). 1107-1109 doi:10.1063/1.100657
Sacchi, Maurizio, Sirotti, Fausto, Morten, Bruno, Prudenziati, Maria (1988) HighTcsuperconductivity in Y‐Ba‐Cu‐O screen‐printed films. Applied Physics Letters, 53 (12). 1110-1112 doi:10.1063/1.100658
Chang, Chin‐An (1988) Reduced moisture‐induced degradation of YBaCuO superconducting films by silver and high deposition temperatures. Applied Physics Letters, 53 (12). 1113-1115 doi:10.1063/1.100034
Jin, S., Tiefel, T. H., Sherwood, R. C., Ramirez, A. P., Gyorgy, E. M., Kammlott, G. W., Fastnacht, R. A. (1988) Transport measurement of 32 K superconductivity in the Ba‐K‐Bi‐O system. Applied Physics Letters, 53 (12). 1116-1118 doi:10.1063/1.100659
Harter, William G., Hermann, A. M., Sheng, Z. Z. (1988) Levitation effects involving highTcthallium based superconductors. Applied Physics Letters, 53 (12). 1119-1121 doi:10.1063/1.100660
Qiu, C. X., Shih, I. (1988) Formation of Tl‐Ca‐Ba‐Cu‐O films by diffusion of Tl into rf‐sputtered Ca‐Ba‐Cu‐O. Applied Physics Letters, 53 (12). 1122-1124 doi:10.1063/1.100661
Itoh, Akiyoshi, Kryder, Mark H. (1988) Ba doping and rapid cooling effects on coercivity of Bi‐Dy‐Al‐Fe garnet films for magneto‐optical recording prepared by pyrolysis. Applied Physics Letters, 53 (12). 1125-1126 doi:10.1063/1.100662
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036

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