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von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030

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Reference TypeJournal (article/letter/editorial)
TitleCompensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects
JournalApplied Physics Letters
Authorsvon Bardeleben, H. J.Author
Bourgoin, J. C.Author
Stievenard, D.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100030Search in ResearchGate
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Mindat Ref. ID8484148Long-form Identifiermindat:1:5:8484148:3
GUID0
Full Referencevon Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
Plain Textvon Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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von Bardeleben, H. J., Stievenard, D., Bourgoin, J. C., Huber, A. (1985) Identification of EL2 in GaAs. Applied Physics Letters, 47 (9). 970-972 doi:10.1063/1.95947
Alaya, S., Maaref, H., von Bardeleben, H. J., Bourgoin, J. C. (1990) Evidence of native gallium antisite defects in semi‐insulating liquid‐encapsulated Czochralski‐grown GaAs. Applied Physics Letters, 56 (19). 1877-1879 doi:10.1063/1.103075
Bourgoin, J. C., von Bardeleben, H. J., Stiévenard, D. (1988) Native defects in gallium arsenide. Journal of Applied Physics, 64 (9). doi:10.1063/1.341206
Stievenard, D., Boddaert, X., Bourgoin, J. C., von Bardeleben, H. J. (1990) Behavior of electron-irradiation-induced defects in GaAs. Physical Review B, 41 (8) 5271-5279 doi:10.1103/physrevb.41.5271
von Bardeleben, H. J., Bourgoin, J. C., Kainosho, K., Oda, O. (1990) Thermal donor formation in Fe‐doped semi‐insulating InP. Applied Physics Letters, 57 (23). 2464-2465 doi:10.1063/1.103852
von Bardeleben, H. J., Bourgoin, J. C. (1985) Formation of AsGa antisite defects in electron‐irradiated GaAs. Journal of Applied Physics, 58 (2). 1041-1043 doi:10.1063/1.336284
Lim, H.‐J., von Bardeleben, H. J., Bourgoin, J. C. (1987) Study of defects in GaAs by differential thermal analysis. Journal of Applied Physics, 62 (7). 2738-2741 doi:10.1063/1.339847
Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1988) Physical meaning of electron capture kinetics onDXcenters. Applied Physics Letters, 53 (19). 1841-1843 doi:10.1063/1.100371
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1989) Comment on ‘‘Atomic model for theEL2 defect in GaAs’’. Physical Review B, 39 (3) 1966 doi:10.1103/physrevb.39.1966
Bourgoin, J. C., von Bardeleben, H. J., Stievenard, D. (1987) Irradiation Induced Defects in III–V Semiconductor Compounds. physica status solidi (a), 102 (2). 499-510 doi:10.1002/pssa.2211020205
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1987) Reply to ‘‘Comment on ‘Identification of a defect in a semiconductor:EL2 in GaAs’ ’’. Physical Review B, 36 (14) 7671-7672 doi:10.1103/physrevb.36.7671
 
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