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Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1988) Physical meaning of electron capture kinetics onDXcenters. Applied Physics Letters, 53 (19). 1841-1843 doi:10.1063/1.100371

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Reference TypeJournal (article/letter/editorial)
TitlePhysical meaning of electron capture kinetics onDXcenters
JournalApplied Physics Letters
AuthorsBourgoin, J. C.Author
Feng, S. L.Author
von Bardeleben, H. J.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100371Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484653Long-form Identifiermindat:1:5:8484653:0
GUID0
Full ReferenceBourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1988) Physical meaning of electron capture kinetics onDXcenters. Applied Physics Letters, 53 (19). 1841-1843 doi:10.1063/1.100371
Plain TextBourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1988) Physical meaning of electron capture kinetics onDXcenters. Applied Physics Letters, 53 (19). 1841-1843 doi:10.1063/1.100371
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1989) Response to ‘‘Comment on ‘Physical meaning of electron capture kinetics onDXcenters’ ’’ [Appl. Phys. Lett.55, 804 (1989)]. Applied Physics Letters, 55 (8). 805-806 doi:10.1063/1.101766
Caswell, N. S., Mooney, P. M. (1989) Comment on ‘‘Physical meaning of electron capture kinetics onDXcenters’’ [Appl. Phys. Lett.53, 1841 (1988)]. Applied Physics Letters, 55 (8). 804-805 doi:10.1063/1.101765
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
Bourgoin, J. C., von Bardeleben, H. J., Stiévenard, D. (1988) Native defects in gallium arsenide. Journal of Applied Physics, 64 (9). doi:10.1063/1.341206
Alaya, S., Maaref, H., von Bardeleben, H. J., Bourgoin, J. C. (1990) Evidence of native gallium antisite defects in semi‐insulating liquid‐encapsulated Czochralski‐grown GaAs. Applied Physics Letters, 56 (19). 1877-1879 doi:10.1063/1.103075
von Bardeleben, H. J., Bourgoin, J. C. (1985) Formation of AsGa antisite defects in electron‐irradiated GaAs. Journal of Applied Physics, 58 (2). 1041-1043 doi:10.1063/1.336284
Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1989) DXcenter inGa1−xAlxAs alloys. Physical Review B, 40 (11) 7663-7670 doi:10.1103/physrevb.40.7663
von Bardeleben, H. J., Stievenard, D., Bourgoin, J. C., Huber, A. (1985) Identification of EL2 in GaAs. Applied Physics Letters, 47 (9). 970-972 doi:10.1063/1.95947
von Bardeleben, H. J., Bourgoin, J. C., Kainosho, K., Oda, O. (1990) Thermal donor formation in Fe‐doped semi‐insulating InP. Applied Physics Letters, 57 (23). 2464-2465 doi:10.1063/1.103852
Bourgoin, J. C., Mauger, A. (1988) Physical origin of theDXcenter. Applied Physics Letters, 53 (9). 749-751 doi:10.1063/1.99821
Lim, H.‐J., von Bardeleben, H. J., Bourgoin, J. C. (1987) Study of defects in GaAs by differential thermal analysis. Journal of Applied Physics, 62 (7). 2738-2741 doi:10.1063/1.339847
 
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