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Bourgoin, J. C., Mauger, A. (1988) Physical origin of theDXcenter. Applied Physics Letters, 53 (9). 749-751 doi:10.1063/1.99821

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Reference TypeJournal (article/letter/editorial)
TitlePhysical origin of theDXcenter
JournalApplied Physics Letters
AuthorsBourgoin, J. C.Author
Mauger, A.Author
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99821Search in ResearchGate
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Mindat Ref. ID8485768Long-form Identifiermindat:1:5:8485768:8
GUID0
Full ReferenceBourgoin, J. C., Mauger, A. (1988) Physical origin of theDXcenter. Applied Physics Letters, 53 (9). 749-751 doi:10.1063/1.99821
Plain TextBourgoin, J. C., Mauger, A. (1988) Physical origin of theDXcenter. Applied Physics Letters, 53 (9). 749-751 doi:10.1063/1.99821
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Alaya, S., Maaref, H., Bourgoin, J. C. (1989) Luminescence of theDXcenter in AlGaAs. Applied Physics Letters, 55 (14). 1406-1408 doi:10.1063/1.101608
Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1988) Physical meaning of electron capture kinetics onDXcenters. Applied Physics Letters, 53 (19). 1841-1843 doi:10.1063/1.100371
Mauger, A., Feng, S. L., Bourgoin, J. C. (1987) Characterization of interface defects in GaAs‐GaAlAs superlattices. Applied Physics Letters, 51 (1). 27-29 doi:10.1063/1.98875
von Bardeleben, H. J., Bourgoin, J. C., Stievenard, D. (1988) Compensation mechanism in semi‐insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters, 53 (12). 1089-1091 doi:10.1063/1.100030
Bourgoin, J. C., von Bardeleben, H. J., Stiévenard, D. (1988) Native defects in gallium arsenide. Journal of Applied Physics, 64 (9). doi:10.1063/1.341206
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von Bardeleben, H. J., Stievenard, D., Bourgoin, J. C., Huber, A. (1985) Identification of EL2 in GaAs. Applied Physics Letters, 47 (9). 970-972 doi:10.1063/1.95947
Tsaur, B‐Y., Turner, G. W., Fan, John C. C. (1981) Efficient Si solar cells by low‐temperature solid‐phase epitaxy. Applied Physics Letters, 39 (9). 749-751 doi:10.1063/1.92878
Zazoui, M., Feng, S. L., Bourgoin, J. C. (1991) Nature of theDXcenter inGa1−xAlxAs. Physical Review B, 44 (19) 10898-10900 doi:10.1103/physrevb.44.10898
Masuyama, A., Nicolet, M.-A., Golecki, I., Tandon, J. L., Sadana, D. K., Washburn, J. (1980) Steady-state thermally annealed GaAs with room-temperature-implanted Si. Applied Physics Letters, 36 (9). 749-751 doi:10.1063/1.91637
Singmaster, K. A., Houle, F. A., Wilson, R. J. (1988) Origin of contaminants in photochemically deposited chromium films. Applied Physics Letters, 53 (12). 1048-1050 doi:10.1063/1.100062
 
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