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Alaya, S., Maaref, H., Bourgoin, J. C. (1989) Luminescence of theDXcenter in AlGaAs. Applied Physics Letters, 55 (14). 1406-1408 doi:10.1063/1.101608

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Reference TypeJournal (article/letter/editorial)
TitleLuminescence of theDXcenter in AlGaAs
JournalApplied Physics Letters
AuthorsAlaya, S.Author
Maaref, H.Author
Bourgoin, J. C.Author
Year1989 (October 2)Volume55
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.101608Search in ResearchGate
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Mindat Ref. ID8488043Long-form Identifiermindat:1:5:8488043:7
GUID0
Full ReferenceAlaya, S., Maaref, H., Bourgoin, J. C. (1989) Luminescence of theDXcenter in AlGaAs. Applied Physics Letters, 55 (14). 1406-1408 doi:10.1063/1.101608
Plain TextAlaya, S., Maaref, H., Bourgoin, J. C. (1989) Luminescence of theDXcenter in AlGaAs. Applied Physics Letters, 55 (14). 1406-1408 doi:10.1063/1.101608
In(1989, October) Applied Physics Letters Vol. 55 (14) AIP Publishing

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Alaya, S., Maaref, H., von Bardeleben, H. J., Bourgoin, J. C. (1990) Evidence of native gallium antisite defects in semi‐insulating liquid‐encapsulated Czochralski‐grown GaAs. Applied Physics Letters, 56 (19). 1877-1879 doi:10.1063/1.103075
Mejri, H., Alaya, S., Maaref, H., Bourgoin, J.C., Barrau, J., Bacquet, G. (1995) Intrinsic and extrinsic radiative recombination processes in quantum wells. Journal of Luminescence, 65 (1) 11-17 doi:10.1016/0022-2313(95)00053-s
Bourgoin, J. C., Mauger, A. (1988) Physical origin of theDXcenter. Applied Physics Letters, 53 (9). 749-751 doi:10.1063/1.99821
Khirouni, K., Maaref, H., Bourgoin, J. C., Garcia, J. C. (1993) Electrical conduction in low temperature grown InP. Applied Physics Letters, 62 (25). 3315-3317 doi:10.1063/1.109056
Zaidi, M. A., Maaref, H., Bourgoin, J. C. (1992) Minority carrier capture cross section of the EL2 defect in GaAs. Applied Physics Letters, 61 (20). 2452-2454 doi:10.1063/1.108149
Bourgoin, J. C., Feng, S. L., von Bardeleben, H. J. (1989) Response to ‘‘Comment on ‘Physical meaning of electron capture kinetics onDXcenters’ ’’ [Appl. Phys. Lett.55, 804 (1989)]. Applied Physics Letters, 55 (8). 805-806 doi:10.1063/1.101766
Feng, S. L., Zazoui, M., Bourgoin, J. C. (1989) Defects in molecular beam epitaxy grown GaAlAs layers. Applied Physics Letters, 55 (1). 68-69 doi:10.1063/1.101756
Zaidi, M. A., Maaref, H., Zazoui, M., Bourgoin, J. C. (1993) Defects in electron‐irradiated GaAlAs alloys. Journal of Applied Physics, 74 (1). 284-290 doi:10.1063/1.354104
Mejri, H., Selmi, A., Maaref, H., Bourgoin, J. C. (1991) The DX center in Si‐planar‐doped AlxGa1−xAs (x=0.32). Journal of Applied Physics, 69 (7). 4060-4063 doi:10.1063/1.348417
Ajjel, R., Zaidi, M. A., Alaya, S., Brémond, G., Guillot, G., Bourgoin, J. C. (1998) Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP. Applied Physics Letters, 72 (3). 302-304 doi:10.1063/1.120718
Maaref, H., Mejri, H., Priester, C., Barrau, J., Bacquet, G., Bourgoin, J. C. (1993) Photocurrent and photoluminescence from quantum‐confined electrons in periodically δ‐doped Si‐GaAs. Journal of Applied Physics, 74 (3). 1987-1991 doi:10.1063/1.354759
 
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