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People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]
JournalApplied Physics Letters
AuthorsPeople, R.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100035Search in ResearchGate
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Mindat Ref. ID8484158Long-form Identifiermindat:1:5:8484158:0
GUID0
Full ReferencePeople, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Plain TextPeople, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Dodson, Brian W., Tsao, Jeffrey Y. (1987) Relaxation of strained‐layer semiconductor structures via plastic flow. Applied Physics Letters, 51 (17). 1325-1327 doi:10.1063/1.98667
Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Yu, Peter Y., Li, Ming‐fu (1988) Comment on ‘‘New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs’’ [Appl. Phys. Lett.51, 1358 (1987)]. Applied Physics Letters, 52 (19). 1645 doi:10.1063/1.99061
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Vatarescu, A. (1988) Comment on ‘‘Optical multistability and phase conjugation fidelity in a high‐birefringence optical fiber’’ [Appl. Phys. Lett.51, 555 (1987)]. Applied Physics Letters, 53 (2). 165 doi:10.1063/1.100354
Landauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532
Fang, P. H. (1988) Comment on ‘‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’’ [Appl. Phys. Lett.51, 2124 (1987)]. Applied Physics Letters, 53 (18). 1768 doi:10.1063/1.100394
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Kubena, R. L., Ward, J. W. (1988) Comment on ‘‘Current‐density profiles for a Ga+ion microprobe and their lithographic implications’’ [Appl. Phys. Lett.51, 1960 (1987)]. Applied Physics Letters, 52 (24). 2089 doi:10.1063/1.99566
 
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