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Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]
JournalApplied Physics Letters
AuthorsGuidotti, DanielAuthor
Hovel, Harold J.Author
Year1988 (September 5)Volume53
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.100072Search in ResearchGate
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Mindat Ref. ID8484000Long-form Identifiermindat:1:5:8484000:4
GUID0
Full ReferenceGuidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Plain TextGuidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
In(1988, September) Applied Physics Letters Vol. 53 (10) AIP Publishing

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Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Guidotti, Daniel, Hovel, Harold J. (1988) Model for degradation of band‐gap photoluminescence in GaAs. Applied Physics Letters, 53 (15). 1411-1413 doi:10.1063/1.99957
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
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People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Xu, Jingming, Shur, Michael (1988) Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)]. Applied Physics Letters, 53 (13). 1219 doi:10.1063/1.100422
Song, Chunying, Ge, Weikun, Jiang, Desheng, Hsu, Chenchia (1988) Response to ‘‘Comment on ‘Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs’ ’’ [Appl. Phys. Lett.52, 760 (1988)]. Applied Physics Letters, 52 (9). 761 doi:10.1063/1.99340
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Harman, G. G. (1989) Comment on ‘‘Aluminum cladding of highTcsuperconductor by thermocompression bonding’’ [Appl. Phys. Lett.53, 2342 (1988)]. Applied Physics Letters, 55 (3). 321 doi:10.1063/1.102415
 
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