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Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]
JournalApplied Physics Letters
AuthorsDodson, Brian W.Author
Tsao, Jeffrey Y.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100036Search in ResearchGate
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Mindat Ref. ID8484160Long-form Identifiermindat:1:5:8484160:5
GUID0
Full ReferenceDodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Plain TextDodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

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Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Dodson, Brian W., Tsao, Jeffrey Y. (1987) Relaxation of strained‐layer semiconductor structures via plastic flow. Applied Physics Letters, 51 (17). 1325-1327 doi:10.1063/1.98667
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Non‐Newtonian strain relaxation in highly strained SiGe heterostructures. Applied Physics Letters, 53 (25). 2498-2500 doi:10.1063/1.100223
Dodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889
Dodson, Brian W. (1988) Work hardening and strain relaxation in strained‐layer buffers. Applied Physics Letters, 53 (1). 37-38 doi:10.1063/1.100115
Dodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Trillo, S., Wabnitz, S. (1988) Response to ‘‘Comment on ‘Optical multistability and phase conjugation fidelity in a high‐birefringence optical fiber’ ’’ [Appl. Phys. Lett.53, 165 (1988)]. Applied Physics Letters, 53 (2). 165 doi:10.1063/1.100418
Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett.53, 1665 (1988)]. Applied Physics Letters, 53 (17). 1666-1667 doi:10.1063/1.99793
 
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