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Dodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594

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Reference TypeJournal (article/letter/editorial)
TitleScaling relations for strained‐layer relaxation
JournalApplied Physics Letters
AuthorsDodson, Brian W.Author
Tsao, Jeffrey Y.Author
Year1989 (September 25)Volume55
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.101594Search in ResearchGate
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Mindat Ref. ID8487935Long-form Identifiermindat:1:5:8487935:2
GUID0
Full ReferenceDodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594
Plain TextDodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594
In(1989, September) Applied Physics Letters Vol. 55 (13) AIP Publishing

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Dodson, Brian W., Tsao, Jeffrey Y. (1987) Relaxation of strained‐layer semiconductor structures via plastic flow. Applied Physics Letters, 51 (17). 1325-1327 doi:10.1063/1.98667
Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Non‐Newtonian strain relaxation in highly strained SiGe heterostructures. Applied Physics Letters, 53 (25). 2498-2500 doi:10.1063/1.100223
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Dodson, Brian W. (1988) Work hardening and strain relaxation in strained‐layer buffers. Applied Physics Letters, 53 (1). 37-38 doi:10.1063/1.100115
Tsao, J. Y., Dodson, B. W. (1988) Excess stress and the stability of strained heterostructures. Applied Physics Letters, 53 (10). 848-850 doi:10.1063/1.100091
Dodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889
Dodson, Brian W., Taylor, Paul A. (1986) Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures. Applied Physics Letters, 49 (11). 642-644 doi:10.1063/1.97066
Chason, E., Bedrossian, P., Houston, J. E., Tsao, J. Y., Dodson, B. W., Picraux, S. T. (1991) Simulations of layer‐by‐layer sputtering during epitaxy. Applied Physics Letters, 59 (27). 3533-3535 doi:10.1063/1.105648
Dodson, Brian W. (1988) An empirical relation for semiconductor strained-layer relaxation. Journal of Crystal Growth, 91 (4). 649-651 doi:10.1016/0022-0248(88)90135-2
Freund, L. B., Hull, R. (1992) On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer. Journal of Applied Physics, 71 (4). 2054-2056 doi:10.1063/1.351154
 
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