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Tsao, J. Y., Dodson, B. W. (1988) Excess stress and the stability of strained heterostructures. Applied Physics Letters, 53 (10). 848-850 doi:10.1063/1.100091

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Reference TypeJournal (article/letter/editorial)
TitleExcess stress and the stability of strained heterostructures
JournalApplied Physics Letters
AuthorsTsao, J. Y.Author
Dodson, B. W.Author
Year1988 (September 5)Volume53
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.100091Search in ResearchGate
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Mindat Ref. ID8484018Long-form Identifiermindat:1:5:8484018:3
GUID0
Full ReferenceTsao, J. Y., Dodson, B. W. (1988) Excess stress and the stability of strained heterostructures. Applied Physics Letters, 53 (10). 848-850 doi:10.1063/1.100091
Plain TextTsao, J. Y., Dodson, B. W. (1988) Excess stress and the stability of strained heterostructures. Applied Physics Letters, 53 (10). 848-850 doi:10.1063/1.100091
In(1988, September) Applied Physics Letters Vol. 53 (10) AIP Publishing

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Dodson, Brian W., Tsao, Jeffrey Y. (1988) Non‐Newtonian strain relaxation in highly strained SiGe heterostructures. Applied Physics Letters, 53 (25). 2498-2500 doi:10.1063/1.100223
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
Dodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594
Freund, L. B., Hull, R. (1992) On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer. Journal of Applied Physics, 71 (4). 2054-2056 doi:10.1063/1.351154
Tsao, J.Y., Dodson, B.W. (1990) Time, temperature and excess stress: Relaxation in strained heterostructures. Surface Science, 228 (1). 260-266 doi:10.1016/0039-6028(90)90305-r
Dodson, Brian W., Tsao, Jeffrey Y. (1987) Relaxation of strained‐layer semiconductor structures via plastic flow. Applied Physics Letters, 51 (17). 1325-1327 doi:10.1063/1.98667
Dodson, Brian W. (1988) Work hardening and strain relaxation in strained‐layer buffers. Applied Physics Letters, 53 (1). 37-38 doi:10.1063/1.100115
Dodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889
Chason, E., Bedrossian, P., Houston, J. E., Tsao, J. Y., Dodson, B. W., Picraux, S. T. (1991) Simulations of layer‐by‐layer sputtering during epitaxy. Applied Physics Letters, 59 (27). 3533-3535 doi:10.1063/1.105648
Tsao, J. Y., Brennan, T. M., Hammons, B. E. (1988) Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy. Applied Physics Letters, 53 (4). 288-290 doi:10.1063/1.99916
 
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