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Dodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889

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Reference TypeJournal (article/letter/editorial)
TitleNature of misfit dislocation sources in strained‐layer semiconductor structures
JournalApplied Physics Letters
AuthorsDodson, Brian W.Author
Year1988 (August)Volume53
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.99889Search in ResearchGate
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Mindat Ref. ID8485502Long-form Identifiermindat:1:5:8485502:4
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Full ReferenceDodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889
Plain TextDodson, Brian W. (1988) Nature of misfit dislocation sources in strained‐layer semiconductor structures. Applied Physics Letters, 53 (5). 394-396 doi:10.1063/1.99889
In(1988, August) Applied Physics Letters Vol. 53 (5) AIP Publishing

See Also

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Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Dodson, Brian W. (1988) Work hardening and strain relaxation in strained‐layer buffers. Applied Physics Letters, 53 (1). 37-38 doi:10.1063/1.100115
Dodson, Brian W., Tsao, Jeffrey. Y. (1988) Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]. Applied Physics Letters, 52 (10). 852 doi:10.1063/1.99658
Dodson, Brian W., Tsao, Jeffrey Y. (1987) Relaxation of strained‐layer semiconductor structures via plastic flow. Applied Physics Letters, 51 (17). 1325-1327 doi:10.1063/1.98667
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Non‐Newtonian strain relaxation in highly strained SiGe heterostructures. Applied Physics Letters, 53 (25). 2498-2500 doi:10.1063/1.100223
Dodson, Brian W., Taylor, Paul A. (1986) Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures. Applied Physics Letters, 49 (11). 642-644 doi:10.1063/1.97066
Dodson, Brian W., Tsao, Jeffrey Y. (1989) Scaling relations for strained‐layer relaxation. Applied Physics Letters, 55 (13). 1345-1347 doi:10.1063/1.101594
Dodson, Brian W. (1988) The effect of cottrell locking on structural stability in strained-layer semiconductor alloy structures. Journal of Crystal Growth, 92 (1). 222-232 doi:10.1016/0022-0248(88)90453-8
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Tsao, J. Y., Dodson, B. W. (1988) Excess stress and the stability of strained heterostructures. Applied Physics Letters, 53 (10). 848-850 doi:10.1063/1.100091
Dodson, Brian W. (1988) An empirical relation for semiconductor strained-layer relaxation. Journal of Crystal Growth, 91 (4). 649-651 doi:10.1016/0022-0248(88)90135-2
 
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