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Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]
JournalApplied Physics Letters
AuthorsRaja, M. Y. A.Author
Brueck, S. R. J.Author
Osinski, M.Author
McInerney, J.Author
Year1988 (September 5)Volume53
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.100073Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484004Long-form Identifiermindat:1:5:8484004:0
GUID0
Full ReferenceRaja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Plain TextRaja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
In(1988, September) Applied Physics Letters Vol. 53 (10) AIP Publishing

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Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1988) Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium. Applied Physics Letters, 53 (18). 1678-1680 doi:10.1063/1.99795
Dodson, Brian W., Tsao, Jeffrey Y. (1988) Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett.53, 1127 (1988)]. Applied Physics Letters, 53 (12). 1128 doi:10.1063/1.100036
Trillo, S., Wabnitz, S. (1988) Response to ‘‘Comment on ‘Optical multistability and phase conjugation fidelity in a high‐birefringence optical fiber’ ’’ [Appl. Phys. Lett.53, 165 (1988)]. Applied Physics Letters, 53 (2). 165 doi:10.1063/1.100418
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett.53, 1665 (1988)]. Applied Physics Letters, 53 (17). 1666-1667 doi:10.1063/1.99793
Neifeld, R. A., Gunapala, S., Liang, G., Shaheen, S. A., Croft, M., Price, J., Simons, D., Hill, W. T. (1988) Erratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]. Applied Physics Letters, 53 (14). 1349 doi:10.1063/1.100423
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Meyer, Gerhard, Amer, Nabil M. (1988) Erratum: Novel optical approach to atomic force microscopy [Appl. Phys. Lett. 53, 1045 (1988)]. Applied Physics Letters, 53 (24). 2400-2402 doi:10.1063/1.100425
 
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