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Neifeld, R. A., Gunapala, S., Liang, G., Shaheen, S. A., Croft, M., Price, J., Simons, D., Hill, W. T. (1988) Erratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]. Applied Physics Letters, 53 (14). 1349 doi:10.1063/1.100423

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]
JournalApplied Physics Letters
AuthorsNeifeld, R. A.Author
Gunapala, S.Author
Liang, G.Author
Shaheen, S. A.Author
Croft, M.Author
Price, J.Author
Simons, D.Author
Hill, W. T.Author
Year1988 (October 3)Volume53
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100423Search in ResearchGate
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Mindat Ref. ID8484311Long-form Identifiermindat:1:5:8484311:7
GUID0
Full ReferenceNeifeld, R. A., Gunapala, S., Liang, G., Shaheen, S. A., Croft, M., Price, J., Simons, D., Hill, W. T. (1988) Erratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]. Applied Physics Letters, 53 (14). 1349 doi:10.1063/1.100423
Plain TextNeifeld, R. A., Gunapala, S., Liang, G., Shaheen, S. A., Croft, M., Price, J., Simons, D., Hill, W. T. (1988) Erratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]. Applied Physics Letters, 53 (14). 1349 doi:10.1063/1.100423
In(1988, October) Applied Physics Letters Vol. 53 (14) AIP Publishing

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Neifeld, R. A., Gunapala, S., Liang, C., Shaheen, S. A., Croft, M., Price, J., Simons, D., Hill, W. T. (1988) Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7. Applied Physics Letters, 53 (8). 703-704 doi:10.1063/1.100646
Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Meyer, Gerhard, Amer, Nabil M. (1988) Erratum: Novel optical approach to atomic force microscopy [Appl. Phys. Lett. 53, 1045 (1988)]. Applied Physics Letters, 53 (24). 2400-2402 doi:10.1063/1.100425
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Trillo, S., Wabnitz, S. (1988) Response to ‘‘Comment on ‘Optical multistability and phase conjugation fidelity in a high‐birefringence optical fiber’ ’’ [Appl. Phys. Lett.53, 165 (1988)]. Applied Physics Letters, 53 (2). 165 doi:10.1063/1.100418
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381
Kitahama, Katsuki, Hirata, Kazuhiko, Nakamatsu, Hirohide, Kawai, Shichio, Fujimori, Naoji, Imai, Takahiro, Yoshino, Hiroshi, Doi, Akira (1989) Erratum: Reinvestigation of the carbon films prepared by ArF excimer laser‐induced chemical vapor deposition [Appl. Phys. Lett.53, 1812 (1988)]. Applied Physics Letters, 54 (10). 968 doi:10.1063/1.101380
Hsu, S. C., Kwok, H. S. (1988) Erratum: Picosecond carrier recombination dynamics of semiconductor‐doped glasses [Appl. Phys. Lett.50, 1782 (1987)]. Applied Physics Letters, 53 (18). 1770 doi:10.1063/1.100424
Jiang, B. L., Shimura, F., Rozgonyi, G. A., Hamaguchi, N., Bedair, S. M. (1988) Erratum: Single‐crystal x‐ray diffraction study of the InGaAs‐GaAsP/GaAs superlattice system [Appl. Phys. Lett. 52, 1258 (1988)]. Applied Physics Letters, 53 (6). 537 doi:10.1063/1.100420
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Santos, M., Sajoto, T., Zrenner, A., Shayegan, M. (1989) Erratum: Effect of substrate temperature on migration of Si in planar‐doped GaAs [Appl. Phys. Lett. 53, 2504 (1988)]. Applied Physics Letters, 55 (6). 603 doi:10.1063/1.102377
 
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