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Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385

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Reference TypeJournal (article/letter/editorial)
TitleLaser‐induced degradation of GaAs photoluminescence
JournalApplied Physics Letters
AuthorsRaja, M. Y. A.Author
Brueck, S. R. J.Author
Osinski, M.Author
McInerney, J.Author
Year1988 (February 22)Volume52
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.99385Search in ResearchGate
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Mindat Ref. ID8483857Long-form Identifiermindat:1:5:8483857:7
GUID0
Full ReferenceRaja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
Plain TextRaja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Laser‐induced degradation of GaAs photoluminescence. Applied Physics Letters, 52 (8). 625-627 doi:10.1063/1.99385
In(1988, February) Applied Physics Letters Vol. 52 (8) AIP Publishing

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Raja, M. Y. A., Brueck, S. R. J., Osinski, M., McInerney, J. (1988) Response to ‘‘Comment on ‘Laser‐induced degradation of GaAs photoluminescence’ ’’ [Appl. Phys. Lett.53, 927 (1988)]. Applied Physics Letters, 53 (10). 927-928 doi:10.1063/1.100073
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1988) Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium. Applied Physics Letters, 53 (18). 1678-1680 doi:10.1063/1.99795
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1989) Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]. Applied Physics Letters, 54 (7). 677 doi:10.1063/1.101381
Salzman, J., Osinski, J. S., Bhat, R., Cummings, K., Harriott, L. (1988) Cross coupled cavity semiconductor laser. Applied Physics Letters, 52 (10). 767-769 doi:10.1063/1.99333
Brueck, S. R. J., Kildal, Helge (1981) Laser‐induced dielectric breakdown in cryogenic liquids. Journal of Applied Physics, 52 (2). 1004-1010 doi:10.1063/1.328796
Shima, Y., Chinone, N., Ito, R. (1977) Effects of facet coatings on the degradation characteristics of GaAs‐Ga1−xAlxAs DH lasers. Applied Physics Letters, 31 (9). 625-627 doi:10.1063/1.89775
Kaminski, J., Spector, J., Prettl, W., Weispfenning, M. (1988) Free‐electron laser study of the nonlinear magnetophotoconductivity inn‐GaAs. Applied Physics Letters, 52 (3). 233-235 doi:10.1063/1.99506
Pavelescu, E.-M., Jouhti, T., Dumitrescu, M., Klar, P. J., Karirinne, S., Fedorenko, Y., Pessa, M. (2003) Growth-temperature-dependent (self-)annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells. Applied Physics Letters, 83 (8). 1497-1499 doi:10.1063/1.1601309
Ehrlich, D. J., Osgood, R. M., Deutsch, T. F. (1980) Laser‐induced microscopic etching of GaAs and InP. Applied Physics Letters, 36 (8). 698-700 doi:10.1063/1.91597
Passlack, M., Hong, M., Schubert, E. F., Kwo, J. R., Mannaerts, J. P., Chu, S. N. G., Moriya, N., Thiel, F. A. (1995) In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity. Applied Physics Letters, 66 (5). 625-627 doi:10.1063/1.114034
 
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