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Landauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]
JournalApplied Physics Letters
AuthorsLandauer, RolfAuthor
Year1988 (June 20)Volume52
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.99532Search in ResearchGate
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Mindat Ref. ID8483397Long-form Identifiermindat:1:5:8483397:0
GUID0
Full ReferenceLandauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532
Plain TextLandauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532
In(1988, June) Applied Physics Letters Vol. 52 (25) AIP Publishing

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Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Hibino, Yoshinori, Hanawa, Fumiaki, Shibata, Shuichi, Abe, Tetsuji (1988) Response to ‘‘Comment on ‘Residual stress effects on refractive indices in undoped silica‐core single‐mode fibers’ ’’ [Appl. Phys. Lett. 52, 413 (1988)]. Applied Physics Letters, 52 (5). 413 doi:10.1063/1.99427
Savo, Bonaventura, Wellstood, Frederick C., Clarke, John (1988) Response to ‘‘Comment on ‘Low‐frequency excess noise in Nb‐Al2O3‐Nb Josephson tunnel junctions’ ’’ [Appl. Phys. Lett.52, 2001 (1988)]. Applied Physics Letters, 52 (23). 2001-2002 doi:10.1063/1.99601
Hinkel, V., Sorba, L., Haak, H., Horn, K., Braun, W. (1988) Response to ‘‘Comment on ‘Evidence for Si diffusion through epitaxial NiSi2grown on Si(111)’ ’’ [Appl. Phys. Lett.52, 2269 (1988)]. Applied Physics Letters, 52 (26). 2269 doi:10.1063/1.99773
Song, Chunying, Ge, Weikun, Jiang, Desheng, Hsu, Chenchia (1988) Response to ‘‘Comment on ‘Pair of local vibration mode absorption bands related to EL2 defects in semi‐insulating GaAs’ ’’ [Appl. Phys. Lett.52, 760 (1988)]. Applied Physics Letters, 52 (9). 761 doi:10.1063/1.99340
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Hack, H. (1988) Comment on ‘‘Residual stress effects on refractive indices in undoped silica‐core single‐mode fibers’’ [Appl. Phys. Lett.50, 1565 (1987)]. Applied Physics Letters, 52 (5). 413 doi:10.1063/1.99426
Kleinpenning, T. G. M. (1988) Comment on ‘‘Low‐frequency excess noise in Nb‐Al2O3‐Nb Josephson tunnel junctions’’ [Appl. Phys. Lett.50, 1757 (1987)]. Applied Physics Letters, 52 (23). 2001 doi:10.1063/1.99600
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
 
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