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Fritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices
JournalApplied Physics Letters
AuthorsFritz, I. J.Author
Gourley, P. L.Author
Dawson, L. R.Author
Schirber, J. E.Author
Year1988 (September 19)Volume53
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100032Search in ResearchGate
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Mindat Ref. ID8484152Long-form Identifiermindat:1:5:8484152:6
GUID0
Full ReferenceFritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
Plain TextFritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
In(1988, September) Applied Physics Letters Vol. 53 (12) AIP Publishing

See Also

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Schirber, J. E., Fritz, I. J., Dawson, L. R. (1985) Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (2). 187-189 doi:10.1063/1.95678
Gourley, P. L., Fritz, I. J., Dawson, L. R. (1988) Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy. Applied Physics Letters, 52 (5). 377-379 doi:10.1063/1.99471
Fritz, I. J., Dawson, L. R., Drummond, T. J., Schirber, J. E., Biefeld, R. M. (1986) Hall‐effect measurements inp‐type InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 48 (2). 139-141 doi:10.1063/1.96976
Fritz, I. J., Gourley, P. L., Dawson, L. R. (1987) Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Applied Physics Letters, 51 (13). 1004-1006 doi:10.1063/1.98984
Osbourn, G. C., Schirber, J. E., Drummond, T. J., Dawson, L. R., Doyle, B. L., Fritz, I. J. (1986) Large valence‐band nonparabolicity and tailorable hole masses in strained‐layer superlattices. Applied Physics Letters, 49 (12). 731-733 doi:10.1063/1.97582
Gourley, P. L., Wiczer, J. J., Zipperian, T. E., Dawson, L. R. (1986) Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (2). 100-102 doi:10.1063/1.97398
Fritz, I. J., Dawson, L. R., Zipperian, T. E. (1983) Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 43 (9). 846-848 doi:10.1063/1.94523
Fritz, I. J., Schirber, J. E., Jones, E. D., Drummond, T. J., Dawson, L. R. (1987) Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure. Applied Physics Letters, 50 (19). 1370-1372 doi:10.1063/1.97859
Zipperian, T. E., Dawson, L. R., Drummond, T. J., Schirber, J. E., Fritz, I. J. (1988) GaAs/(In,Ga)As,p‐channel, multiple strained quantum well field‐effect transistors with high transconductance and high peak saturated drain current. Applied Physics Letters, 52 (12). 975-977 doi:10.1063/1.99246
Jones, E. D., Ackermann, H., Schirber, J. E., Drummond, T. J., Dawson, L. R., Fritz, I. J. (1985) Magneto‐optic determinations of the pressure dependence of band‐gap energies and effective masses in strained‐layer superlattices. Applied Physics Letters, 47 (5). 492-494 doi:10.1063/1.96103
Fritz, I. J., Drummond, T. J., Osbourn, G. C., Schirber, J. E., Jones, E. D. (1986) Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wells. Applied Physics Letters, 48 (24). 1678-1680 doi:10.1063/1.96803
 
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