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Fritz, I. J., Gourley, P. L., Dawson, L. R. (1987) Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Applied Physics Letters, 51 (13). 1004-1006 doi:10.1063/1.98984

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Reference TypeJournal (article/letter/editorial)
TitleCritical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
JournalApplied Physics Letters
AuthorsFritz, I. J.Author
Gourley, P. L.Author
Dawson, L. R.Author
Year1987 (September 28)Volume51
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.98984Search in ResearchGate
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Mindat Ref. ID8481036Long-form Identifiermindat:1:5:8481036:8
GUID0
Full ReferenceFritz, I. J., Gourley, P. L., Dawson, L. R. (1987) Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Applied Physics Letters, 51 (13). 1004-1006 doi:10.1063/1.98984
Plain TextFritz, I. J., Gourley, P. L., Dawson, L. R. (1987) Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures. Applied Physics Letters, 51 (13). 1004-1006 doi:10.1063/1.98984
In(1987, September) Applied Physics Letters Vol. 51 (13) AIP Publishing

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Gourley, P. L., Fritz, I. J., Dawson, L. R. (1988) Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy. Applied Physics Letters, 52 (5). 377-379 doi:10.1063/1.99471
Fritz, I. J., Dawson, L. R., Zipperian, T. E. (1983) Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 43 (9). 846-848 doi:10.1063/1.94523
Fritz, I. J., Gourley, P. L., Dawson, L. R., Schirber, J. E. (1988) Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 53 (12). 1098-1100 doi:10.1063/1.100032
Fritz, I. J., Picraux, S. T., Dawson, L. R., Drummond, T. J., Laidig, W. D., Anderson, N. G. (1985) Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (10). 967-969 doi:10.1063/1.95783
Fritz, I. J. (1987) Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy. Applied Physics Letters, 51 (14). 1080-1082 doi:10.1063/1.98746
Fritz, I. J., Schirber, J. E., Jones, E. D., Drummond, T. J., Dawson, L. R. (1987) Magnetotransport and luminescence measurements in ann‐type selectively doped InGaAs/GaAs strained quantum well structure. Applied Physics Letters, 50 (19). 1370-1372 doi:10.1063/1.97859
Gourley, P. L., Wiczer, J. J., Zipperian, T. E., Dawson, L. R. (1986) Diffusion dynamics of holes in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (2). 100-102 doi:10.1063/1.97398
Schirber, J. E., Fritz, I. J., Dawson, L. R. (1985) Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices. Applied Physics Letters, 46 (2). 187-189 doi:10.1063/1.95678
Bulman, G. E., Zipperian, T. E., Dawson, L. R. (1986) Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices. Applied Physics Letters, 49 (4). 212-214 doi:10.1063/1.97174
van der Ziel, J. P., Chand, Naresh (1991) High‐temperature operation (to 180  °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers. Applied Physics Letters, 58 (13). 1437-1439 doi:10.1063/1.105191
Bulman, G. E., Myers, D. R., Zipperian, T. E., Dawson, L. R. (1986) Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode. Applied Physics Letters, 48 (15). 1015-1017 doi:10.1063/1.96621
 
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